FET, MOSFET Arrays
Browse available FET, MOSFET Arrays part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7328TRPBFMOSFET 2P-CH 30V 8A 8SO |
5,840 | - |
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Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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HT8KB6TB1MOSFET 2N-CH 40V 8A 8HSMT |
6,890 | - |
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Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 40V | 8A (Ta), 15A (Tc) | 17.2mOhm @ 8A, 10V | 2.5V @ 1mA | 10.6nC @ 10V | 530pF @ 20V | 2W (Ta), 14W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) |
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IQE220N15NM5SCATMA1MOSFET 2N-CH 150V 8WHSON |
6,934 | - |
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Datasheet | OptiMOS™ | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 150V | - | - | - | - | - | - | - | - | - | Surface Mount | PG-WHSON-8-1 |
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FAM65CR51ADZ1MOSFET 2N-CH 650V 41A APMCD-B16 |
3,999 | - |
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Datasheet | - | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 650V | 41A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 189W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
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NVXK2TR80WDTMOSFET 4N-CH 1200V 20A APM32 |
5,193 | - |
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Datasheet | - | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2VR80WXT2MOSFET 6N-CH 1200V 31A APM32 |
3,969 | - |
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Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 |
2,267 | - |
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Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1P45M12W2-1LAMOSFET 6N-CH 1200V ACEPACK DMT |
5,427 | - |
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Datasheet | ECOPACK® | 32-PowerDIP Module (1.264", 32.10mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 60.5mOhm @ 20A, 18V | 5V @ 1mA | 100nC @ 18V | 2086pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | ACEPACK DMT-32 |
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NVXK2VR80WDT2MOSFET 6N-CH 1200V 20A APM32 |
2,337 | - |
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Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1F80M12W2-1LAAUTOMOTIVE-GRADE ACEPACK DMT-32 |
9,403 | - |
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Datasheet | * | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NXH040F120MNF1PGMOSFET 4N-CH 1200V 30A 22PIM |
6,006 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
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MSCSM120AM50T1AGMOSFET 2N-CH 1200V 55A |
7,822 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH010P90MNF1PGMOSFET 2N-CH 900V 154A |
3,091 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH010P120MNF1PGMOSFET 2N-CH 1200V 114A |
5,990 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH020P120MNF1PGMOSFET 2N-CH 1200V 51A |
2,676 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH006P120M3F2PTHGMOSFET 2N-CH 1200V 191A 36PIM |
1 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 191A (Tc) | 8mOhm @ 100A, 18V | 4.4V @ 80mA | 622nC @ 20V | 11914pF @ 800V | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
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A2U8M12W3-FCMOSFET 4N-CH 750V/1.2KV 180A |
9,411 | - |
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Datasheet | ECOPACK® | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 750V, 1.2kV | 180A, 140A | 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V | 4.2V @ 2mA, 4V @ 2mA | 288nC @ 18V, 304nC @ 18V | 7660pF @ 400V, 7370pF @ 800V | - | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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CAB011A12GM3MOSFET 2N-CH 1200V 141A MODULE |
5,026 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 141A (Tj) | 13.9mOhm @ 150A, 15V | 3.9V @ 34mA | 354nC @ 15V | 11000pF @ 1000V | 10mW | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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CAB008A12GM3TMOSFET 2N-CH 1200V 182A MODULE |
1 | - |
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Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 182A (Tj) | 10.4mOhm @ 150A, 15V | 3.6V @ 46mA | 472nC @ 15V | 13600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM300D12P4G101MOSFET 2N-CH 1200V 291A MODULE |
2,899 | - |
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Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 291A (Tc) | - | 4.8V @ 145.6mA | - | 30000pF @ 10V | 925W (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
FET, MOSFET Arrays FAQ
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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
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