FET, MOSFET Arrays
Use the filters and product table below to compare FET, MOSFET Arrays components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTTFD018N08LCMOSFET 2N-CH 80V 6A 12WQFN |
2,945 | - |
|
Datasheet | - | 12-PowerWQFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 80V | 6A (Ta), 26A (Tc) | 18mOhm @ 7.8A, 10V | 2.5V @ 44µA | 12.4nC @ 10V | 856pF @ 40V | 1.7W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 12-WQFN (3.3x3.3) |
|
NTTFD021N08CMOSFET 2N-CH 80V 6A 12WQFN |
2,611 | - |
|
Datasheet | - | 12-PowerWQFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 80V | 6A (Ta), 24A (Tc) | 21mOhm @ 7.8A, 10V | 4V @ 44µA | 8.4nC @ 10V | 572pF @ 40V | 1.7W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 12-WQFN (3.3x3.3) |
|
NTTFD022N10CMOSFET 2N-CH 100V 6A 12WQFN |
2,980 | - |
|
Datasheet | - | 12-PowerWQFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 100V | 6A (Ta), 24A (Tc) | 25mOhm @ 7.8A, 10V | 4V @ 44µA | 9nC @ 10V | 585pF @ 50V | 1.7W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 12-WQFN (3.3x3.3) |
|
NVMFD5C446NWFT1GMOSFET 2N-CH 40V 24A 8DFN |
2,965 | - |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 24A (Ta), 127A (Tc) | 2.9mOhm @ 30A, 10V | 3.5V @ 250µA | 38nC @ 10V | 2450pF @ 25V | 3.2W (Ta), 89W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
NXV08A170DB2MOSFET 2N-CH 80V 200A APM12-CBA |
238 | - |
|
Datasheet | - | 12-PowerDIP Module (1.118", 28.40mm) | Tray | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 80V | 200A (Tj) | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | 4V @ 250µA | 195nC @ 10V | 14000pF @ 40V | - | 175°C (TJ) | Automotive | AEC-Q100 | Through Hole | APM12-CBA |
|
NVXK2TR40WXTMOSFET 4N-CH 1200V 27A APM32 |
60 | - |
|
Datasheet | - | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 27A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | 1789pF @ 800V | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
NXH030F120M3F1PTGMOSFET 4N-CH 1200V 38A 22PIM |
26 | - |
|
Datasheet | - | Module | Tray | Active | SiCFET (Silicon Carbide) | 4 N-Channel (Full Bridge) | Depletion Mode | 1200V (1.2kV) | 38A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | 2246pF @ 800V | 100W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
|
NXH010P120M3F1PGMOSFET 2N-CH 1200V 105A |
28 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | 6451pF @ 800V | 272W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH010P120M3F1PTGMOSFET 2N-CH 1200V 105A |
27 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | 6451pF @ 800V | 272W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH030P120M3F1PTGMOSFET 2N-CH 1200V 42A |
28 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 42A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | 2271pF @ 800V | 100W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
FET, MOSFET Arrays FAQ
Common questions about filtering, comparing and sourcing FET, MOSFET Arrays components.
How can I narrow the FET, MOSFET Arrays selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FET, MOSFET Arrays part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.