FET, MOSFET Arrays
Use the filters and product table below to compare FET, MOSFET Arrays components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVMFWD010N10MCLT1GMOSFET 2N-CH 100V 11.6A 8DFN |
9,000 | - |
|
Datasheet | - | 8-PowerTDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 11.6A (Ta), 61A (Tc) | 10.4mOhm @ 17A, 10V | 3V @ 97µA | 26nC @ 10V | 1800pF @ 50V | 3.1W (Ta), 84W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
FDMS1D2N03DSDMOSFET |
52,964 | - |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVMFD040N10MCLT1GMOSFET 2N-CH 100V 6.1A 8DFN |
6,000 | - |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 6.1A (Ta), 21A (Tc) | 39mOhm @ 5A, 10V | 3V @ 26µA | 8.4nC @ 10V | 520pF @ 50V | 3.2W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
NXH020U90MNF2PTGMOSFET 2N-CH 900V 149A |
4 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 900V | 149A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 352W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NVXK2VR40WXT2MOSFET 6N-CH 1200V 55A APM32 |
14 | - |
|
Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | 1789pF @ 800V | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
NVVR26A120M1WSBMOSFET 2N-CH 1200V AHPM15-CDE |
10 | - |
|
Datasheet | - | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDE |
|
NVVR26A120M1WSSMOSFET 2N-CH 1200V AHPM15-CDI |
9 | - |
|
Datasheet | - | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDI |
|
FAM65CR51DZ1MOSFET 2N-CH 650V 33A APMCD-B16 |
67 | - |
|
Datasheet | - | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 650V | 33A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 160W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
|
NXH015P120M3F1PTGMOSFET 2N-CH 1200V 77A |
13 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 77A (Tc) | 20mOhm @ 60A, 18V | 4.4V @ 30mA | 211nC @ 18V | 4696pF @ 800V | 198W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH008P120M3F1PGMOSFET 2N-CH 1200V 145A |
18 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 145A (Tc) | 10.9mOhm @ 120A, 18V | 4.4V @ 60mA | 419nC @ 18V | 8334pF @ 800V | 382W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
FET, MOSFET Arrays FAQ
Common questions about filtering, comparing and sourcing FET, MOSFET Arrays components.
How can I narrow the FET, MOSFET Arrays selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FET, MOSFET Arrays part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.