FET, MOSFET Arrays
Use the filters and product table below to compare FET, MOSFET Arrays components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UFB15C12E1BC3NMOSFET 4P-CH 1200V 24A MODULE |
8,436 | - |
|
Datasheet | - | Module | Bulk | Active | SiCFET (Silicon Carbide) | 4 P-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 24A (Tj) | 90mOhm @ 15A, 12V | 6V @ 10mA | 46nC @ 15V | 1445pF @ 800V | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
UHB50SC12E1BC3NMOSFET 2P-CH 1200V 69A MODULE |
6,527 | - |
|
Datasheet | - | Module | Bulk | Active | SiCFET (Silicon Carbide) | 2 P-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 69A (Tj) | 24mOhm @ 50A, 12V | 6V @ 20mA | 85nC @ 15V | 2930pF @ 800V | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
UFB25SC12E1BC3NMOSFET 4P-CH 1200V 36A MODULE |
4,658 | - |
|
Datasheet | - | Module | Bulk | Active | SiCFET (Silicon Carbide) | 4 P-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 36A (Tj) | 45mOhm @ 25A, 12V | 6V @ 10mA | 42.5nC @ 15V | 1450pF @ 800V | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
UHB100SC12E1BC3NMOSFET 2P-CH 1200V 100A MODULE |
2,320 | - |
|
Datasheet | - | Module | Bulk | Active | SiCFET (Silicon Carbide) | 2 P-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tc) | 12mOhm @ 70A, 12V | 6V @ 40mA | 170nC @ 15V | 5859pF @ 800V | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
FET, MOSFET Arrays FAQ
Common questions about filtering, comparing and sourcing FET, MOSFET Arrays components.
How can I narrow the FET, MOSFET Arrays selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FET, MOSFET Arrays part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.