FET, MOSFET Arrays

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FDMD8260LET60 MOSFET 2N-CH 60V 15A 12POWER onsemi	7,272	-	RFQ	Datasheet	PowerTrench®	12-PowerWDFN	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	15A	5.8mOhm @ 15A, 10V	3V @ 250µA	68nC @ 10V	5245pF @ 30V	1.1W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	12-Power3.3x5
ALD212908APAL MOSFET 2N-CH 10.6V 0.08A 8PDIP Advanced Linear Devices Inc.	7,109	-	RFQ	Datasheet	EPAD®, Zero Threshold™	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP
ALD310704PCL MOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc.	3,728	-	RFQ	Datasheet	EPAD®, Zero Threshold™	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 P-Channel, Matched Pair	-	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	-	-	Through Hole	16-PDIP
ALD310708PCL MOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc.	3,316	-	RFQ	Datasheet	EPAD®, Zero Threshold™	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 P-Channel, Matched Pair	-	8V	-	-	780mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	-	-	Through Hole	16-PDIP
ALD1101BPAL MOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc.	3,396	-	RFQ	Datasheet	-	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	-	10.6V	-	75Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP
ALD1102BPAL MOSFET 2P-CH 10.6V 8PDIP Advanced Linear Devices Inc.	5,033	-	RFQ	Datasheet	-	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual) Matched Pair	-	10.6V	-	270Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP
ALD110808ASCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc.	4,979	-	RFQ	Datasheet	EPAD®	16-SOIC (0.154", 3.90mm Width)	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	-	10.6V	12mA, 3mA	500Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Surface Mount	16-SOIC
ALD114804APCL MOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc.	7,794	-	RFQ	Datasheet	EPAD®	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	16-PDIP
IRF7530TR MOSFET 2N-CH 20V 5.4A MICRO8 Infineon Technologies	6,036	-	RFQ	Datasheet	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	20V	5.4A	30mOhm @ 5.4A, 4.5V	1.2V @ 250µA	26nC @ 4.5V	1310pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
SD5000N PDIP 16L ROHS MOSFET 4N-CH 20V 0.05A 16DIP Linear Integrated Systems, Inc.	4,796	-	RFQ	Datasheet	-	16-DIP (0.300", 7.62mm)		Obsolete	MOSFET (Metal Oxide)	4 N-Channel	-	20V	50mA (Ta)	70Ohm @ 1mA, 5V	1.5V @ 1µA	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	16-DIP
SMA5118 MOSFET 6N-CH 500V 5A 12SIP Sanken Electric USA Inc.	8	-	RFQ	Datasheet	-	12-SIP	Tube	Active	MOSFET (Metal Oxide)	6 N-Channel (3-Phase Bridge)	-	500V	5A	1.4Ohm @ 2.5A, 10V	4V @ 1mA	-	770pF @ 10V	4W	150°C (TJ)	-	-	Through Hole	12-SIP
SMA5112 MOSFET 6N-CH 250V 7A 12SIP Sanken Electric USA Inc.	3,873	-	RFQ	Datasheet	-	12-SIP	Tube	Active	MOSFET (Metal Oxide)	6 N-Channel (3-Phase Bridge)	-	250V	7A	500mOhm @ 3.5A, 10V	4V @ 1mA	-	450pF @ 10V	4W	150°C (TJ)	-	-	Through Hole	12-SIP
ALD110808APCL MOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc.	2,978	-	RFQ	Datasheet	EPAD®	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	-	10.6V	12mA, 3mA	500Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	16-PDIP
SLA5037 MOSFET 4N-CH 100V 10A 12SIP Sanken Electric USA Inc.	9,271	-	RFQ	Datasheet	-	12-SIP Exposed Tab	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel	Logic Level Gate	100V	10A	80mOhm @ 5A, 10V	2V @ 250mA	-	1630pF @ 10V	5W	150°C (TJ)	-	-	Through Hole	12-SIP
ALD310702APCL MOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc.	3,420	-	RFQ	Datasheet	EPAD®, Zero Threshold™	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 P-Channel, Matched Pair	-	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	-	-	Through Hole	16-PDIP
ALD310704APCL MOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc.	3,289	-	RFQ	Datasheet	EPAD®, Zero Threshold™	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 P-Channel, Matched Pair	-	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	-	-	Through Hole	16-PDIP
ALD310708APCL MOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc.	4,185	-	RFQ	Datasheet	EPAD®, Zero Threshold™	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 P-Channel, Matched Pair	-	8V	-	-	780mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	-	-	Through Hole	16-PDIP
SLA5041 MOSFET 4N-CH 200V 10A 12SIP Sanken Electric USA Inc.	9,059	-	RFQ	Datasheet	-	12-SIP Exposed Tab	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel	Logic Level Gate	200V	10A	175mOhm @ 5A, 10V	4V @ 1mA	-	850pF @ 10V	5W	150°C (TJ)	-	-	Through Hole	12-SIP
EPC2100ENGRT MOSFET 2N-CH 30V 10A DIE EPC	6,740	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Obsolete	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	30V	10A (Ta), 40A (Ta)	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	475pF @ 15V, 1960pF @ 15V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
ALD1101APAL MOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc.	4,524	-	RFQ	Datasheet	-	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	-	10.6V	-	75Ohm @ 5V	1V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP

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