FET, MOSFET Arrays

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
ISG0614N06NM5HSCATMA1 MOSFET 2N-CH 60V 31A 10WHITFN Infineon Technologies	2,990	-	RFQ	Datasheet	OptiMOS™ 5	10-PowerWDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	60V	31A (Ta), 233A (Tc)	1.6mOhm @ 50A, 10V	3.3V @ 86µA	102nC @ 10V	6400pF @ 30V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHITFN-10-1
IAUTN08S5N012LATMA1 MOSFET 2N-CH 80V 300A PG-HSOF Infineon Technologies	1,956	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerSFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel, Common Drain, Common Source	-	80V	300A (Tj)	1.15mOhm @ 100A, 10V	3.3V @ 275µA	24nC @ 10V	15340pF @ 40V	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HSOF-8-2
WI62195 MOSFET 2N-CH 750V 9A 14PQFN Wise-Integration	1,477	-	RFQ	Datasheet	WiseGan™	14-PowerLDFN	Tray	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	750V	9A (Tj)	250mOhm @ 2A, 6V	1.75V @ 10mA	1.9nC @ 6V	53.5pF @ 400V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	14-PQFN (6x8)
NXV08A170DB2 MOSFET 2N-CH 80V 200A APM12-CBA onsemi	238	-	RFQ	Datasheet	-	12-PowerDIP Module (1.118", 28.40mm)	Tray	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	80V	200A (Tj)	0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V	4V @ 250µA	195nC @ 10V	14000pF @ 40V	-	175°C (TJ)	Automotive	AEC-Q100	Through Hole	APM12-CBA
NVXK2TR40WXT MOSFET 4N-CH 1200V 27A APM32 onsemi	60	-	RFQ	Datasheet	-	32-PowerDIP Module (1.311", 33.30mm)	Tube	Active	Silicon Carbide (SiC)	4 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	27A (Tc)	59mOhm @ 35A, 20V	4.3V @ 10mA	106nC @ 20V	1789pF @ 800V	319W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
F435MR07W1D7S8B11ABPSA1 MOSFET 4N-CH 650V 35A MODULE Infineon Technologies	42	-	RFQ	Datasheet	EasyPACK™ 1B	Module	Tray	Active	MOSFET (Metal Oxide)	4 N-Channel (Full Bridge)	-	650V	35A	39.4mOhm @ 35A, 10V	4.45V @ 1.74mA	141nC @ 10V	6950pF @ 400V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
NXH030F120M3F1PTG MOSFET 4N-CH 1200V 38A 22PIM onsemi	26	-	RFQ	Datasheet	-	Module	Tray	Active	SiCFET (Silicon Carbide)	4 N-Channel (Full Bridge)	Depletion Mode	1200V (1.2kV)	38A (Tc)	38.5mOhm @ 30A, 18V	4.4V @ 15mA	110nC @ 18V	2246pF @ 800V	100W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	22-PIM (33.8x42.5)
NXH010P120M3F1PG MOSFET 2N-CH 1200V 105A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tc)	14.5mOhm @ 90A, 18V	4.4V @ 45mA	314nC @ 18V	6451pF @ 800V	272W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH010P120M3F1PTG MOSFET 2N-CH 1200V 105A onsemi	27	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tc)	14.5mOhm @ 90A, 18V	4.4V @ 45mA	314nC @ 18V	6451pF @ 800V	272W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
FF33MR12W1M1HPB11BPSA1 MOSFET Infineon Technologies	30	-	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DF11MR12W1M1HFB67BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	38	-	RFQ	Datasheet	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	AG-EASY1B
NXH030P120M3F1PTG MOSFET 2N-CH 1200V 42A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	42A (Tc)	38.5mOhm @ 30A, 18V	4.4V @ 15mA	110nC @ 18V	2271pF @ 800V	100W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH040P120MNF1PG MOSFET 2N-CH 1200V 30A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	1505pF @ 800V	74W	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
NXH008P120M3F1PTG MOSFET 2N-CH 1200V 145A onsemi	27	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	145A (Tc)	10.9mOhm @ 120A, 18V	4.4V @ 60mA	419nC @ 18V	8334pF @ 800V	382W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
GCMX010A120B2B1P MOSFET 2N-CH 1200V 214A SemiQ	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	214A (Tc)	12mOhm @ 100A, 20V	4V @ 40mA	476nC @ 20V	13100pF @ 800V	750W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH010P120MNF1PTNG MOSFET 2N-CH 1200V 114A onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
CAB016M12FM3T MOSFET 2N-CH 1200V 78A MODULE Wolfspeed, Inc.	30	-	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	78A (Tj)	21.3mOhm @ 80A, 15V	3.6V @ 23mA	236nC @ 15V	6600pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
NXH020F120MNF1PG MOSFET 4N-CH 1200V 51A 22PIM onsemi	28	-	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	22-PIM (33.8x42.5)
CAB011M12FM3T MOSFET 2N-CH 1200V 105A MODULE Wolfspeed, Inc.	38	-	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	105A (Tj)	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	10300pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
CCB032M12FM3T MOSFET 6N-CH 1200V 40A MODULE Wolfspeed, Inc.	33	-	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	1200V (1.2kV)	40A (Tj)	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	3400pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module

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