FET, MOSFET Arrays

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
EPC2106 MOSFET 2N-CH 100V 1.7A DIE EPC	59,446	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	1.7A	70mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
EPC2103 MOSFET 2N-CH 80V 28A DIE EPC	5,410	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	80V	28A	5.5mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	760pF @ 40V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
EPC2107 MOSFET 3N-CH 100V 9BGA EPC	5,182	-	RFQ	Datasheet	eGaN®	9-VFBGA	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	3 N-Channel (Half Bridge + Synchronous Bootstrap)	-	100V	1.7A, 500mA	320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.16nC @ 5V, 0.044nC @ 5V	16pF @ 50V, 7pF @ 50V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	9-BGA (1.35x1.35)
EPC2110 MOSFET 2N-CH 120V 3.4A DIE EPC	12,304	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Dual) Common Source	-	120V	3.4A	60mOhm @ 4A, 5V	2.5V @ 700µA	0.8nC @ 5V	80pF @ 60V	-	-40°C ~ 150°C (TJ)	-	-	-	Die
EPC2221 MOSFET 2N-CH 100V 5A DIE EPC	4,063	-	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Dual) Common Source	-	100V	5A	-	-	-	-	-	150°C (TJ)	-	-	Surface Mount	Die
EPC2111 MOSFET 2N-CH 30V 16A DIE EPC	19,151	-	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	30V	16A (Ta)	19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V	2.5V @ 5mA	2.2nC @ 5V, 5.7nC @ 5V	230pF @ 15V, 590pF @ 15V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
EPC2104 MOSFET 2N-CH 100V 23A DIE EPC	3,154	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	23A	6.3mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
EPC2102 MOSFET 2N-CH 60V 23A DIE EPC	3,505	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	60V	23A	4.4mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
EPC2105 MOSFET 2N-CH 80V 9.5A/38A DIE EPC	1,410	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	80V	9.5A, 38A	14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	2.5V @ 2.5mA, 2.5V @ 10mA	2.5nC @ 5V, 10nC @ 5V	300pF @ 40V, 1100pF @ 40V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die
EPC2101 MOSFET 2N-CH 60V 9.5A/38A DIE EPC	469	-	RFQ	Datasheet	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	60V	9.5A, 38A	11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V	2.5V @ 3mA, 2.5V @ 12mA	2.7nC @ 5V, 12nC @ 5V	300pF @ 30V, 1200pF @ 30V	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die

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FREQUENTLY ASKED QUESTIONS

FET, MOSFET Arrays FAQ

Common questions about filtering, comparing and sourcing FET, MOSFET Arrays components.

How can I narrow the FET, MOSFET Arrays selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

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Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.