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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GC11N65D5 Goford Semiconductor

GC11N65D5

N650V, 11A,RD<360M@10V,VTH2.5V~4

Goford Semiconductor

4,942 -
Datasheet SuperJunction 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT025N06AM Goford Semiconductor

GT025N06AM

N60V,170A,RD<2.5M@10V,VTH1.2V~2.

Goford Semiconductor

776 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 5119 pF @ 30 V - 215W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT011N03ME Goford Semiconductor

GT011N03ME

MOSFET N-CH ESD 30V A TO-263

Goford Semiconductor

789 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 209A (Tc) 4.5V, 10V 1.6mOhm @ 10A, 10V 2.5V @ 250µA 98 nC @ 10 V ±18V 6140 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GC11N65M Goford Semiconductor

GC11N65M

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

775 -
Datasheet SuperJunction TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 768 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT025N06AD5 Goford Semiconductor

GT025N06AD5

N60V, 170A, RD<2.2M@10V,VTH1.2V~

Goford Semiconductor

4,141 -
Datasheet SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.5V @ 250µA 81 nC @ 10 V ±20V 5044 pF @ 30 V - 215W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT025N06D5 Goford Semiconductor

GT025N06D5

N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.

Goford Semiconductor

7,056 -
Datasheet SGT 8-PowerTDFN Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.5V @ 250µA 81 nC @ 10 V ±20V 5125 pF @ 30 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT045N10M Goford Semiconductor

GT045N10M

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Goford Semiconductor

609 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 30A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 4198 pF @ 50 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT045N10D5 Goford Semiconductor

GT045N10D5

MOSFET N-CH 100V 120A DFN5*6-8L

Goford Semiconductor

4,517 -
Datasheet - 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5mOhm @ 30A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 4217 pF @ 50 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G030N06M Goford Semiconductor

G030N06M

MOSFET N-CH 60V 223A TO-263

Goford Semiconductor

770 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 223A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2.5V @ 250µA 101 nC @ 4.5 V ±20V 12432 pF @ 30 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
G080P06M Goford Semiconductor

G080P06M

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Goford Semiconductor

699 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 7.5mOhm @ 20A, 10V 4V @ 250µA 186 nC @ 10 V ±20V 15870 pF @ 30 V - 294W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.