FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRLL2703TR MOSFET N-CH 30V 3.9A SOT223 Infineon Technologies	3,457	-	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	3.9A (Ta)	4V, 10V	45mOhm @ 3.9A, 10V	2.4V @ 250µA	14 nC @ 5 V	±16V	530 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRLMS1902TRPBF MOSFET N-CH 20V 3.2A MICRO6 Infineon Technologies	3,417	-	RFQ	Datasheet	HEXFET®	SOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	3.2A (Ta)	2.7V, 4.5V	100mOhm @ 2.2A, 4.5V	700mV @ 250µA (Min)	7 nC @ 4.5 V	±12V	300 pF @ 15 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro6™(TSOP-6)
IRLML2502GTRPBF MOSFET N-CH 20V 4.2A SOT23 Infineon Technologies	5,224	-	RFQ	Datasheet	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 4.2A, 4.5V	1.2V @ 250µA	12 nC @ 5 V	±12V	740 pF @ 15 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23
IRLML5103GTRPBF MOSFET P-CH 30V 0.76A SOT-23-3 Infineon Technologies	4,037	-	RFQ	Datasheet	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	760mA (Ta)	4.5V, 10V	600mOhm @ 600mA, 10V	1V @ 250µA	5.1 nC @ 10 V	±20V	75 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23
IPD60R2K1CEBTMA1 MOSFET N-CH 600V 2.3A TO252-3 Infineon Technologies	6,447	-	RFQ	Datasheet	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.3A (Tc)	10V	2.1Ohm @ 760mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3
SPP02N60S5HKSA1 MOSFET N-CH 600V 1.8A TO220-3 Infineon Technologies	4,080	-	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	1.8A (Tc)	10V	3Ohm @ 1.1A, 10V	5.5V @ 80µA	9.5 nC @ 10 V	±20V	240 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
IRLU8113PBF MOSFET N-CH 30V 94A I-PAK Infineon Technologies	6,082	-	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	94A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	2.25V @ 250µA	32 nC @ 4.5 V	±20V	2920 pF @ 15 V	-	89W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
IPA60R360P7SE8228XKSA1 MOSFET N-CH 600V 9A TO220 Infineon Technologies	3,412	-	RFQ	Datasheet	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
IRLZ44ZPBF MOSFET N-CH 55V 51A TO220AB Infineon Technologies	6,878	-	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	51A (Tc)	4.5V, 10V	13.5mOhm @ 31A, 10V	3V @ 250µA	36 nC @ 5 V	±16V	1620 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
SPU02N60C3BKMA1 MOSFET N-CH 650V 1.8A TO251-3 Infineon Technologies	2,223	-	RFQ	Datasheet	CoolMOS™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	1.8A (Tc)	10V	3Ohm @ 1.1A, 10V	3.9V @ 80µA	12.5 nC @ 10 V	±20V	200 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3-21

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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