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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SPA02N80C3XKSA1 Infineon Technologies

SPA02N80C3XKSA1

MOSFET N-CH 800V 2A TO220-FP

Infineon Technologies

3,318 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 120µA 16 nC @ 10 V ±20V 290 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
SPD08N50C3BTMA1 Infineon Technologies

SPD08N50C3BTMA1

MOSFET N-CH 560V 7.6A TO252-3

Infineon Technologies

4,881 -
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-11
IRF9520NLPBF Infineon Technologies

IRF9520NLPBF

MOSFET P-CH 100V 6.8A TO262

Infineon Technologies

7,503 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IPA50R650CE Infineon Technologies

IPA50R650CE

MOSFET N-CH 500V 6.1A TO220-FP

Infineon Technologies

4,872 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 27.2W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRF540NLPBF Infineon Technologies

IRF540NLPBF

MOSFET N-CH 100V 33A TO262

Infineon Technologies

8,504 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF7807D2TR Infineon Technologies

IRF7807D2TR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

6,765 -
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Tc) - - - Surface Mount 8-SO
IRF7241TR Infineon Technologies

IRF7241TR

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies

4,812 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SOIC
IRF3711LPBF Infineon Technologies

IRF3711LPBF

MOSFET N-CH 20V 110A TO262

Infineon Technologies

4,832 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
IRFR1010ZTRRPBF Infineon Technologies

IRFR1010ZTRRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

4,053 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
SPP04N60C3HKSA1 Infineon Technologies

SPP04N60C3HKSA1

MOSFET N-CH 650V 4.5A TO220-3

Infineon Technologies

6,324 -
Datasheet CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.