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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF9520NS Infineon Technologies

IRF9520NS

MOSFET P-CH 100V 6.8A D2PAK

Infineon Technologies

2,403 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF520NL Infineon Technologies

IRF520NL

MOSFET N-CH 100V 9.7A TO262

Infineon Technologies

3,690 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF7811WTRPBF Infineon Technologies

IRF7811WTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

7,984 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V 12mOhm @ 15A, 4.5V 1V @ 250µA 33 nC @ 5 V ±12V 2335 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IPD12N03LB G Infineon Technologies

IPD12N03LB G

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies

2,495 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 11.6mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1300 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRFR5305TRR Infineon Technologies

IRFR5305TRR

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

3,428 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
SPP80N06S2L-09 Infineon Technologies

SPP80N06S2L-09

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

7,565 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 3480 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRFR1205 Infineon Technologies

IRFR1205

MOSFET N-CH 55V 44A DPAK

Infineon Technologies

3,652 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRLR2905TRL Infineon Technologies

IRLR2905TRL

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

7,686 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRLI3705NPBF Infineon Technologies

IRLI3705NPBF

MOSFET N-CH 55V 52A TO220AB FP

Infineon Technologies

2,820 -
Datasheet HEXFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 4V, 10V 10mOhm @ 28A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB Full-Pak
AUIRL3705Z Infineon Technologies

AUIRL3705Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

8,705 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.