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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF7488TRPBF Infineon Technologies

IRF7488TRPBF

MOSFET N-CH 80V 6.3A 8SO

Infineon Technologies

2,424 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IPAW60R600P7SXKSA1 Infineon Technologies

IPAW60R600P7SXKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies

6,351 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPB80N04S304ATMA1 Infineon Technologies

IPB80N04S304ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

7,793 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SPB80N06S2-H5 Infineon Technologies

SPB80N06S2-H5

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

6,258 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 5500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IRF7493TR Infineon Technologies

IRF7493TR

MOSFET N-CH 80V 9.3A 8SO

Infineon Technologies

7,110 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 15mOhm @ 5.6A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1510 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRLR4343 Infineon Technologies

IRLR4343

MOSFET N-CH 55V 26A DPAK

Infineon Technologies

2,547 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFB4229PBFXKMA1 Infineon Technologies

IRFB4229PBFXKMA1

TRENCH >=100V

Infineon Technologies

8,781 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 46A (Tc) 10V 46mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFR2605 Infineon Technologies

IRFR2605

MOSFET N-CH 55V 19A D-PAK

Infineon Technologies

9,508 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 85mOhm @ 11A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 420 pF @ 25 V - 50W (Tc) - - - Surface Mount TO-252AA (DPAK)
IRF8010STRRPBF Infineon Technologies

IRF8010STRRPBF

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies

3,195 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3830 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF630NSTRLPBF Infineon Technologies

IRF630NSTRLPBF

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies

3,689 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.