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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPD5N03LAG Infineon Technologies

IPD5N03LAG

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies

2,689 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.2mOhm @ 50A, 10V 2V @ 35µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - - -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRFH7932TR2PBF Infineon Technologies

IRFH7932TR2PBF

MOSFET N-CH 30V 24A PQFN56

Infineon Technologies

5,747 -
Datasheet - 8-PowerVDFN Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 104A (Tc) - 3.3mOhm @ 25A, 10V 2.35V @ 100µA 51 nC @ 4.5 V - 4270 pF @ 15 V - 3.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6) Single Die
IPI06CN10N G Infineon Technologies

IPI06CN10N G

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies

8,483 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 139 nC @ 10 V ±20V 9200 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI60R165CPAKSA1 Infineon Technologies

IPI60R165CPAKSA1

MOSFET N-CH 650V 21A TO262-3

Infineon Technologies

5,625 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IRL2505STRL Infineon Technologies

IRL2505STRL

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies

3,515 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL2505STRR Infineon Technologies

IRL2505STRR

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies

6,700 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL2910STRL Infineon Technologies

IRL2910STRL

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies

4,958 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL1004STRL Infineon Technologies

IRL1004STRL

MOSFET N-CH 40V 130A D2PAK

Infineon Technologies

9,402 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF5305L Infineon Technologies

IRF5305L

MOSFET P-CH 55V 31A TO262

Infineon Technologies

4,582 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF2204LPBF Infineon Technologies

IRF2204LPBF

MOSFET N-CH 40V 170A TO262

Infineon Technologies

8,718 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.