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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPP05CN10NGXKSA1 Infineon Technologies

IPP05CN10NGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

9,727 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 181 nC @ 10 V ±20V 12000 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IRLI540N Infineon Technologies

IRLI540N

MOSFET N-CH 100V 23A TO220AB FP

Infineon Technologies

6,533 -
Datasheet HEXFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4V, 10V 44mOhm @ 12A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
IRF3205ZL Infineon Technologies

IRF3205ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies

7,861 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFB41N15D Infineon Technologies

IRFB41N15D

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies

2,576 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRFS3107 Infineon Technologies

AUIRFS3107

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies

9,983 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFZ48VS Infineon Technologies

IRFZ48VS

MOSFET N-CH 60V 72A D2PAK

Infineon Technologies

6,199 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL3103D1PBF Infineon Technologies

IRL3103D1PBF

MOSFET N-CH 30V 64A TO220AB

Infineon Technologies

8,687 -
Datasheet FETKY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 2W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SPP20N60C3HKSA1 Infineon Technologies

SPP20N60C3HKSA1

MOSFET N-CH 600V 20.7A TO220-3

Infineon Technologies

7,627 -
Datasheet CoolMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPI20N60C3HKSA1 Infineon Technologies

SPI20N60C3HKSA1

MOSFET N-CH 600V 20.7A TO262-3

Infineon Technologies

6,853 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
GS61004B-TR Infineon Technologies Canada Inc.

GS61004B-TR

GS61004B-TR

Infineon Technologies Canada Inc.

9,385 -
Datasheet - 3-SMD, No Lead Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100 V 45A (Tc) 6V 20mOhm @ 13.5A, 6V 1.3V @ 7mA 6.2 nC @ 6 V +7V, -10V 295 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.