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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFSL59N10D Infineon Technologies

IRFSL59N10D

MOSFET N-CH 100V 59A TO262

Infineon Technologies

9,094 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
BTS113AE3045ANTMA1 Infineon Technologies

BTS113AE3045ANTMA1

MOSFET N-CH 60V 11.5A TO220AB

Infineon Technologies

5,535 -
Datasheet TEMPFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11.5A (Tc) 4.5V 170mOhm @ 5.8A, 4.5V 2.5V @ 1mA - ±10V 560 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-220AB
BSC016N04LSGATMA1 Infineon Technologies

BSC016N04LSGATMA1

MOSFET N-CH 40V 31A/100A TDSON

Infineon Technologies

8,181 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 100A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 2V @ 85µA 150 nC @ 10 V ±20V 12000 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
IPD90P03P404ATMA1 Infineon Technologies

IPD90P03P404ATMA1

MOSFET P-CH 30V 90A TO252-3

Infineon Technologies

5,233 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 10V 4.5mOhm @ 90A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRF1404STRR Infineon Technologies

IRF1404STRR

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies

5,202 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF1405STRR Infineon Technologies

IRF1405STRR

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies

2,769 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFB23N20D Infineon Technologies

IRFB23N20D

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies

8,371 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL2910L Infineon Technologies

IRL2910L

MOSFET N-CH 100V 55A TO262

Infineon Technologies

7,195 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRL3103D2PBF Infineon Technologies

IRL3103D2PBF

MOSFET N-CH 30V 54A TO220AB

Infineon Technologies

8,865 -
Datasheet FETKY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 14mOhm @ 32A, 10V 1V @ 250µA 44 nC @ 4.5 V ±16V 2300 pF @ 25 V - 2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IPB025N10N3GE8187ATMA1 Infineon Technologies

IPB025N10N3GE8187ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies

4,740 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.