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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPA80R1K4CEXKSA2 Infineon Technologies

IPA80R1K4CEXKSA2

MOSFET N-CH 800V 3.9A TO220

Infineon Technologies

484 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA082N10NF2SXKSA1 Infineon Technologies

IPA082N10NF2SXKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies

8 -
Datasheet StrongIRFET™ 2 TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 6V, 10V 8.2mOhm @ 30A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
IPA80R750P7XKSA1 Infineon Technologies

IPA80R750P7XKSA1

MOSFET N-CHANNEL 800V 7A TO220

Infineon Technologies

500 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPB80N04S404ATMA1 Infineon Technologies

IPB80N04S404ATMA1

MOSFET N-CH 40V 80A TO263-3-2

Infineon Technologies

1,989 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.2mOhm @ 80A, 10V 4V @ 35µA 43 nC @ 10 V ±20V 3440 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPB80N04S4L04ATMA1 Infineon Technologies

IPB80N04S4L04ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

661 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4mOhm @ 80A, 10V 2.2V @ 35µA 60 nC @ 10 V +20V, -16V 4690 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPD90N04S402ATMA1 Infineon Technologies

IPD90N04S402ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies

2,397 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.4mOhm @ 90A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
IPB19DP10NMATMA1 Infineon Technologies

IPB19DP10NMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies

1,815 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.9A (Ta), 13.8A (Tc) 10V 185mOhm @ 12A, 10V 4V @ 1.04mA 45 nC @ 10 V ±20V 2000 pF @ 50 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB80N04S403ATMA1 Infineon Technologies

IPB80N04S403ATMA1

MOSFET N-CH 40V 80A TO263-3-2

Infineon Technologies

906 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPD60R360CFD7ATMA1 Infineon Technologies

IPD60R360CFD7ATMA1

MOSFET N-CH 600V 7A TO252-3-313

Infineon Technologies

1,375 -
Datasheet CoolMOS™ CFD7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
IPAN60R180P7SXKSA1 Infineon Technologies

IPAN60R180P7SXKSA1

MOSFET N-CH 600V 18A TO220-FP

Infineon Technologies

368 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.