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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPI25N06S3-25 Infineon Technologies

IPI25N06S3-25

MOSFET N-CH 55V 25A TO262-3

Infineon Technologies

9,049 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 10V 25.1mOhm @ 15A, 10V 4V @ 20µA 41 nC @ 10 V ±20V 1862 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI25N06S3L-22 Infineon Technologies

IPI25N06S3L-22

MOSFET N-CH 55V 25A TO262-3

Infineon Technologies

9,158 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 21.6mOhm @ 17A, 10V 2.2V @ 20µA 47 nC @ 10 V ±16V 2260 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI60R199CPXKSA1 Infineon Technologies

IPI60R199CPXKSA1

MOSFET N-CH 600V 16A TO262-3

Infineon Technologies

8,641 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3-05 Infineon Technologies

IPI80N06S3-05

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

5,735 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.4mOhm @ 63A, 10V 4V @ 110µA 240 nC @ 10 V ±20V 10760 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3-07 Infineon Technologies

IPI80N06S3-07

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

8,750 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.8mOhm @ 51A, 10V 4V @ 80µA 170 nC @ 10 V ±20V 7768 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3L06XK Infineon Technologies

IPI80N06S3L06XK

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

8,545 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 5.9mOhm @ 56A, 10V 2.2V @ 80µA 196 nC @ 10 V ±16V 9417 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3L-08 Infineon Technologies

IPI80N06S3L-08

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

6,476 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 7.9mOhm @ 43A, 10V 2.2V @ 55µA 134 nC @ 10 V ±16V 6475 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPP03N03LB G Infineon Technologies

IPP03N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

4,746 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 55A, 10V 2V @ 100µA 59 nC @ 5 V ±20V 7624 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP048N06L G Infineon Technologies

IPP048N06L G

MOSFET N-CH 60V 100A TO220-3

Infineon Technologies

2,304 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 100A, 10V 2V @ 270µA 225 nC @ 10 V ±20V 7600 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP04N03LB G Infineon Technologies

IPP04N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

3,283 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.8mOhm @ 55A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5203 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.