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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFS4310ZPBF Infineon Technologies

IRFS4310ZPBF

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies

4,297 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF5210LPBF Infineon Technologies

IRF5210LPBF

MOSFET P-CH 100V 38A TO262

Infineon Technologies

7,512 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
IRF6215LPBF Infineon Technologies

IRF6215LPBF

MOSFET P-CH 150V 13A TO262

Infineon Technologies

6,672 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUXAKF1405ZS-7P Infineon Technologies

AUXAKF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies

8,822 -
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFSL38N20DPBF Infineon Technologies

IRFSL38N20DPBF

MOSFET N-CH 200V 43A TO262

Infineon Technologies

6,095 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) - 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V - 2900 pF @ 25 V - - - - - Through Hole TO-262
IRFR3806PBF Infineon Technologies

IRFR3806PBF

MOSFET N-CH 60V 43A DPAK

Infineon Technologies

2,010 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFSL4310PBF Infineon Technologies

IRFSL4310PBF

MOSFET N-CH 100V 130A TO262

Infineon Technologies

5,765 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFR1018EPBF Infineon Technologies

IRFR1018EPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies

4,795 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFS4229PBF Infineon Technologies

IRFS4229PBF

MOSFET N-CH 250V 45A D2PAK

Infineon Technologies

4,680 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFS3607PBF Infineon Technologies

IRFS3607PBF

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies

7,016 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.