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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPI70N10S312AKSA1 Infineon Technologies

IPI70N10S312AKSA1

MOSFET N-CH 100V 70A TO262-3

Infineon Technologies

4,638 -
Datasheet OptiMOS™ T TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N03S4L03AKSA1 Infineon Technologies

IPI80N03S4L03AKSA1

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies

4,239 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N04S306AKSA1 Infineon Technologies

IPI80N04S306AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

5,278 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S208AKSA1 Infineon Technologies

IPI80N06S208AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

3,676 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S2L05AKSA1 Infineon Technologies

IPI80N06S2L05AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

8,546 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S2L11AKSA1 Infineon Technologies

IPI80N06S2L11AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

5,704 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 60A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI90R1K0C3XKSA1 Infineon Technologies

IPI90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO262-3

Infineon Technologies

8,881 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI90R1K2C3XKSA1 Infineon Technologies

IPI90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO262-3

Infineon Technologies

9,293 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI90R340C3XKSA1 Infineon Technologies

IPI90R340C3XKSA1

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies

9,824 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI90R500C3XKSA1 Infineon Technologies

IPI90R500C3XKSA1

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies

3,242 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.