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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPB45N04S4L08ATMA1 Infineon Technologies

IPB45N04S4L08ATMA1

MOSFET N-CH 40V 45A TO263-3-2

Infineon Technologies

2,568 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 7.6mOhm @ 45A, 10V 2.2V @ 17µA 30 nC @ 10 V +20V, -16V 2340 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPB65R660CFDATMA1 Infineon Technologies

IPB65R660CFDATMA1

MOSFET N-CH 650V 6A D2PAK

Infineon Technologies

9,814 -
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPD100N06S403ATMA1 Infineon Technologies

IPD100N06S403ATMA1

MOSFET N-CH 60V 100A TO252-3-11

Infineon Technologies

7,368 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD50N06S4L12ATMA1 Infineon Technologies

IPD50N06S4L12ATMA1

MOSFET N-CH 60V 50A TO252-3-11

Infineon Technologies

5,397 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 2.2V @ 20µA 40 nC @ 10 V ±16V 2890 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD65R660CFDBTMA1 Infineon Technologies

IPD65R660CFDBTMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies

2,884 -
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
BSB012NE2LX Infineon Technologies

BSB012NE2LX

MOSFET N-CH 25V 37A/170A 2WDSON

Infineon Technologies

4,230 -
Datasheet OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 170A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2V @ 250µA 67 nC @ 10 V ±20V 4900 pF @ 12 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
BSS84PH6327XTSA1 Infineon Technologies

BSS84PH6327XTSA1

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies

2,496 -
Datasheet SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23
SN7002NH6327XTSA1 Infineon Technologies

SN7002NH6327XTSA1

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies

5,790 -
Datasheet SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT23
BUZ30AHXKSA1 Infineon Technologies

BUZ30AHXKSA1

MOSFET N-CH 200V 21A TO220-3

Infineon Technologies

3,465 -
Datasheet SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
BUZ31L H Infineon Technologies

BUZ31L H

MOSFET N-CH 200V 13.5A TO220-3

Infineon Technologies

5,954 -
Datasheet SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13.5A (Tc) 5V 200mOhm @ 7A, 5V 2V @ 1mA - ±20V 1600 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
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WINSUN SOURCING SUPPORT

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Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.