FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPDD60R050G7XTMA1MOSFET N-CH 600V 47A HDSOP-10 |
3,215 | - |
|
Datasheet | CoolMOS™ G7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2670 pF @ 400 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
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IMZA65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
150 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
AUIRFP4568-EMOSFET N-CH 150V 171A TO247AD |
355 | - |
|
Datasheet | HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
IPW60R075CPFKSA1MOSFET N-CH 650V 39A TO247-3 |
237 | - |
|
Datasheet | CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | ±20V | 4000 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
AUIRFP4568MOSFET N-CH 150V 171A TO247AC |
386 | - |
|
Datasheet | HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPZA60R037P7XKSA1MOSFET N-CH 600V 76A TO247-4 |
194 | - |
|
Datasheet | CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121 nC @ 10 V | ±20V | 5243 pF @ 400 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IPDQ60R022S7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
738 | - |
|
Datasheet | CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | ±20V | 5639 pF @ 300 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMZA65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
144 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 53A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
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IPZA65R018CFD7XKSA1HIGH POWER_NEW |
238 | - |
|
Datasheet | CoolMOS™ CFD7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11660 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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AIMW120R060M1HXKSA11200V COOLSIC MOSFET PG-TO247-3 |
220 | - |
|
Datasheet | CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.
