FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM100UM45DAGMOSFET N-CH 1000V 215A SP6 |
34 | - |
|
Datasheet | POWER MOS 7® | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 215A (Tc) | 10V | 52mOhm @ 107.5A, 10V | 5V @ 30mA | 1602 nC @ 10 V | ±30V | 42700 pF @ 25 V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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LND150N3-G-P002MOSFET N-CH 500V 30MA TO92-3 |
1,829 | - |
|
Datasheet | - | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
TN2640LG-GMOSFET N-CH 400V 260MA 8SOIC |
2,593 | - |
|
Datasheet | - | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 260mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
APT4F120SMOSFET N-CH 1200V 4A D3PAK |
128 | - |
|
Datasheet | POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1385 pF @ 25 V | - | 175W (Tc) | - | - | - | Surface Mount | D3PAK |
|
MSC360SMA120SCT/RMOSFET SIC 1200 V 360 MOHM PSMT |
1,300 | - |
|
Datasheet | - | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 250µA | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
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MSC360SMA120SDT/RMOSFET SIC 1200 V 360 MOHM TO-26 |
795 | - |
|
Datasheet | mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 18V, 20V | 450mOhm @ 5A, 20V | 5V @ 250µA | 21 nC @ 20 V | +23V, -10V | 258 pF @ 1.2 kV | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC360SMA120BMOSFET SIC 1200 V 360 MOHM TO-24 |
130 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 500µA (Typ) | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC180SMA120SDT/RMOSFET SIC 1200 V 180 MOHM TO-26 |
773 | - |
|
Datasheet | mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 18V, 20V | 225mOhm @ 8A, 20V | 5V @ 500µA | 36 nC @ 20 V | +23V, -10V | 481 pF @ 1.2 kV | - | 146W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC090SMA070SCT/RMOSFET SIC 700 V 90 MOHM PSMT |
1,300 | - |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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MSC090SMA070SDT/RMOSFET SIC 700 V 90 MOHM TO-263- |
800 | - |
|
Datasheet | mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 34A (Tc) | 18V, 20V | 112mOhm @ 15A, 20V | 5V @ 750µA | 41 nC @ 20 V | +23V, -10V | 806 pF @ 700 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.
