FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT100MC120JCU2SICFET N-CH 1200V 143A SOT227 |
8,508 | - |
|
Datasheet | - | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360 nC @ 20 V | +25V, -10V | 5960 pF @ 1000 V | - | 600W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
APT50MC120JCU2MOSFET N-CH 1200V 71A SOT227 |
6,825 | - |
|
Datasheet | - | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 1200 V | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179 nC @ 20 V | +25V, -10V | 2980 pF @ 1000 V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD |
6,643 | - |
|
Datasheet | POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
APT1001RBNMOSFET N-CH 1000V 11A TO247AD |
8,115 | - |
|
Datasheet | POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
APT5020BNMOSFET N-CH 500V 28A TO247AD |
8,858 | - |
|
Datasheet | POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
APT5020BNFRMOSFET N-CH 500V 28A TO247AD |
4,485 | - |
|
Datasheet | POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
TN2130K1-G-VAOMOSFET N-CH 300V 85MA SOT23-3 |
7,914 | - |
|
Datasheet | - | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | 2.4V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | - | - | Surface Mount | SOT-23-3 |
|
TP5335K1-G-VAOMOSFET P-CH 350V 85MA SOT23-3 |
6,071 | - |
|
Datasheet | - | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 |
2,602 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
MSC025SMA330B4MOSFET SIC 3300 V 25 MOHM TO-247 |
5,810 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.7V @ 7mA | 410 nC @ 20 V | +23V, -10V | 8720 pF @ 2640 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.