FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NTMTS1D5N08MC PTNG 80V IN CEBU PQFN88 onsemi	3,000	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	33A (Ta), 287A (Tc)	6V, 10V	1.56mOhm @ 80A, 10V	4V @ 650µA	140 nC @ 10 V	±20V	10400 pF @ 40 V	-	3.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFNW (8.3x8.4)
NTH4L095N065SC1 SIC MOS TO247-4L 650V onsemi	420	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	31A (Tc)	15V, 18V	105mOhm @ 12A, 18V	4.3V @ 4mA	50 nC @ 10 V	+22V, -8V	956 pF @ 325 V	-	129W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
NTH4L070N120M3S SILICON CARBIDE (SIC) MOSFET EL onsemi	175	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	18V	87mOhm @ 15A, 18V	4.4V @ 7mA	57 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
NTMFS5C604NLT3G MOSFET N-CH 60V 40A/287A 5DFN onsemi	4,853	-	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Ta), 287A (Tc)	4.5V, 10V	1.2mOhm @ 50A, 10V	2V @ 250µA	120 nC @ 10 V	±20V	8900 pF @ 25 V	-	3.9W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)
NVMTS1D1N04CTXG T6 40V SL AIZU SINGLE NCH PQFN 8 onsemi	2,909	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	48.8A (Ta), 277A (Tc)	10V	1.1mOhm @ 50A, 10V	4V @ 210µA	86 nC @ 10 V	±20V	5410 pF @ 25 V	-	4.7W (Ta), 153W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-DFNW (8.3x8.4)
NTBLS1D5N10MCTXG MOSFET - POWER, SINGLE, N-CHANNE onsemi	1,415	-	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Ta), 312A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 799µA	131 nC @ 10 V	±20V	10100 pF @ 50 V	-	3.4W (Ta), 322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-HPSOF
NTBL060N065SC1 M2 650V SIC MOSFET 60MOHM WITH T onsemi	1,998	-	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	15V, 18V	70mOhm @ 20A, 18V	4.3V @ 6.5mA	74 nC @ 18 V	+22V, -8V	1473 pF @ 325 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-HPSOF
NVMTS001N06CTXG MOSFET N-CH 60V 53.7A/376A 8DFNW onsemi	6,000	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	53.7A (Ta), 376A (Tc)	10V	0.91mOhm @ 50A, 10V	4V @ 250µA	113 nC @ 10 V	±20V	8705 pF @ 30 V	-	5W (Ta), 244W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-DFNW (8.3x8.4)
NTHL075N065SC1 SILICON CARBIDE (SIC) MOSFET - E onsemi	730	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	61 nC @ 18 V	+22V, -8V	1196 pF @ 325 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
FCMT080N65S3 MOSFET N-CH 650V 38A 4TDFN onsemi	3,000	-	RFQ	Datasheet	SuperFET® III	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	38A (Tc)	10V	80mOhm @ 19A, 10V	4.5V @ 880µA	71 nC @ 10 V	±30V	2765 pF @ 400 V	-	260W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-TDFN (8x8)

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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