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FETs, MOSFETs

Browse available FETs, MOSFETs part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVTFS5826NLWFTWG-UM onsemi

NVTFS5826NLWFTWG-UM

MOSFET N-CH 60V 7.6A 8WDFN

onsemi

2,803 -
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7.6A (Ta) 4.5V, 10V 24mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
APL602LG-1 Microchip Technology

APL602LG-1

MOSFET LINEAR 600 V 49 A TO-264

Microchip Technology

6,828 -
Datasheet - TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 12V 125mOhm @ 24.5A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
SIHFU024-GE3 Vishay Siliconix

SIHFU024-GE3

LOGIC MOSFET N-CHANNEL 60V

Vishay Siliconix

7,731 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
SQ2308FES-T1_GE3 Vishay Siliconix

SQ2308FES-T1_GE3

MOSFET N-CH 60V 2.3A SOT23

Vishay Siliconix

8,173 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 2.3A (Tc) 4.5V, 10V 150mOhm @ 2.3A, 10V 2.5V @ 250µA 5.3 nC @ 10 V ±20V 205 pF @ 30 V - 2W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
SQ2319CES-T1_GE3 Vishay Siliconix

SQ2319CES-T1_GE3

MOSFET P-CH 40V 4.6A SOT23-3

Vishay Siliconix

7,670 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Tc) 4.5V, 10V 75mOhm @ 3A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 620 pF @ 20 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
SSM3J35FS,LF Toshiba Semiconductor and Storage

SSM3J35FS,LF

SMALL LOW RON PCH MOSFETS VDSS:-

Toshiba Semiconductor and Storage

3,833 -
Datasheet - SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V 1V @ 1mA - ±10V 12.2 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount SSM
SSM3K121TU,LF Toshiba Semiconductor and Storage

SSM3K121TU,LF

MOSFET N-CH 20V 3.2A ES6

Toshiba Semiconductor and Storage

2,154 -
Datasheet - 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.5V, 4V 48mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UFM
SQ2337CES-T1_GE3 Vishay Siliconix

SQ2337CES-T1_GE3

MOSFET P-CH 80V 2.2A SOT23-3

Vishay Siliconix

5,274 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 2.2A (Tc) 6V, 10V 290mOhm @ 1.2A, 10V 2.5V @ 250µA 18 nC @ 40 V ±20V 620 pF @ 40 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
SQJ166ELP-T1_GE3 Vishay Siliconix

SQJ166ELP-T1_GE3

MOSFET N-CH 50V 50A TO252AA

Vishay Siliconix

9,906 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 67A (Tc) 4.5V, 10V 9.7mOhm @ 20A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1903 pF @ 25 V - 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
SQS124ELNW-T1_GE3 Vishay Siliconix

SQS124ELNW-T1_GE3

MOSFET N-CH 30V 100A TO252AA

Vishay Siliconix

7,710 -
Datasheet TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 107A (Tc) 4.5V, 10V 3mOhm @ 10A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 2945 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
SIS5712DN-T1-GE3 Vishay Siliconix

SIS5712DN-T1-GE3

MOSFET N-CH 150V 2.2A PPAK1212-8

Vishay Siliconix

6,831 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 5.6A (Ta), 18A (Tc) 7.5V, 10V 55.5mOhm @ 5.6A, 10V 4V @ 250µA 11.3 nC @ 10 V ±20V 500 pF @ 75 V - 3.7W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
ISK018NE1LM7ATSA1 Infineon Technologies

ISK018NE1LM7ATSA1

ISK018NE1LM7AULA1 MOSFET

Infineon Technologies

9,028 -
Datasheet OptiMOS™ 7 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 30A (Ta), 129A (Tc) 4.5V, 7V 1.8mOhm @ 20A, 7V 2V @ 106µA 13.6 nC @ 7 V ±7V 1600 pF @ 7.5 V - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
ISK057N04LM6ATSA1 Infineon Technologies

ISK057N04LM6ATSA1

MOSFET N-CH 40V 64A 6VSON

Infineon Technologies

6,645 -
Datasheet OptiMOS™ 6 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 64A (Tc) 4.5V, 10V 5.75mOhm @ 20A, 10V 2.3V @ 250µA 12 nC @ 10 V ±20V 870 pF @ 20 V - 2.1W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
BSB044N08NN3GXUMA2 Infineon Technologies

BSB044N08NN3GXUMA2

MOSFET N-CH 80V 18A/90A 2WDSON

Infineon Technologies

4,142 -
Datasheet OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Ta), 90A (Tc) 10V 4.4mOhm @ 30A, 10V 3.5V @ 97µA 73 nC @ 10 V ±20V 5700 pF @ 40 V - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
BSF450NE7NH3XUMA2 Infineon Technologies

BSF450NE7NH3XUMA2

MOSFET N-CH 75V 5A/15A 2WDSON

Infineon Technologies

6,776 -
Datasheet OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 5A (Ta), 15A (Tc) 7V, 10V 45mOhm @ 8A, 10V 3.8V @ 8µA 6 nC @ 10 V ±20V 390 pF @ 37.5 V - 2.2W (Ta), 18W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
BSF134N10NJ3GXUMA2 Infineon Technologies

BSF134N10NJ3GXUMA2

MOSFET N-CH 100V 9A/40A 2WDSON

Infineon Technologies

3,453 -
Datasheet OptiMOS™ DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V 3.5V @ 40µA 30 nC @ 10 V ±20V 2300 pF @ 50 V - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
APT80GA90B2D40 Microchip Technology

APT80GA90B2D40

MOSFET N-CH 800V 34A T-MAX

Microchip Technology

2,937 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
SIR5812DP-T1-RE3 Vishay Siliconix

SIR5812DP-T1-RE3

MOSFET N-CH 80V 30A PPAK SO-8

Vishay Siliconix

2,326 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 45.3A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 775 pF @ 40 V - 4.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
MSC035SMA070SCT/R Microchip Technology

MSC035SMA070SCT/R

MOSFET SIC 700 V 35 MOHM PSMT

Microchip Technology

8,820 -
Datasheet mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 71A (Tc) 18V, 20V 44mOhm @ 30A, 20V 5V @ 2mA 93 nC @ 20 V +23V, -10V 1806 pF @ 700 V - 276W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
MSC020SMB120D/S Microchip Technology

MSC020SMB120D/S

MOSFET SIC 1200 V 20 MOHM DIE

Microchip Technology

3,121 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs FAQ

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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.