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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RCJ510N25TL Rohm Semiconductor

RCJ510N25TL

MOSFET N-CH 250V 51A LPTS

Rohm Semiconductor

4,965 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 51A (Tc) 10V 65mOhm @ 25.5A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 7000 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) - - Surface Mount LPTS
RJ1P12BBDTLL Rohm Semiconductor

RJ1P12BBDTLL

MOSFET N-CH 100V 120A LPTL

Rohm Semiconductor

848 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 5.8mOhm @ 50A, 10V 4V @ 2.5mA 80 nC @ 10 V ±20V 4170 pF @ 50 V - 178W (Tc) 150°C (TJ) - - Surface Mount LPTL
R6520ENXC7G Rohm Semiconductor

R6520ENXC7G

650V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

958 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
R6055VNZ4C13 Rohm Semiconductor

R6055VNZ4C13

600V 55A TO-247, PRESTOMOS WITH

Rohm Semiconductor

586 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V, 15V 71mOhm @ 16A, 15V 6.5V @ 1.5mA 80 nC @ 10 V ±30V 3700 pF @ 100 V - 543W (Tc) 150°C (TJ) - - Through Hole TO-247
SCT3120ALHRC11 Rohm Semiconductor

SCT3120ALHRC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor

2,204 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 18V 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 103W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
R6070JNZ4C13 Rohm Semiconductor

R6070JNZ4C13

600V 70A TO-247, PRESTOMOS WITH

Rohm Semiconductor

550 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 15V 58mOhm @ 35A, 15V 7V @ 3mA 165 nC @ 15 V ±30V 6000 pF @ 100 V - 770W (Tc) 150°C (TJ) - - Through Hole TO-247G
SCT2280KEGC11 Rohm Semiconductor

SCT2280KEGC11

1200V, 14A, THD, SILICON-CARBIDE

Rohm Semiconductor

1,664 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 18 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C - - Through Hole TO-247N
SCT3120AW7TL Rohm Semiconductor

SCT3120AW7TL

SICFET N-CH 650V 21A TO263-7

Rohm Semiconductor

788 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) - 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 100W 175°C (TJ) - - Surface Mount TO-263-7
SCT3160KLHRC11 Rohm Semiconductor

SCT3160KLHRC11

SICFET N-CH 1200V 17A TO247N

Rohm Semiconductor

592 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 103W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
SCT2450KEHRC11 Rohm Semiconductor

SCT2450KEHRC11

1200V, 10A, THD, SILICON-CARBIDE

Rohm Semiconductor

427 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 18V 585mOhm @ 3A, 18V 4V @ 900µA 27 nC @ 18 V +22V, -6V 463 pF @ 800 V - 85W (Tc) 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.