FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GP2T080A120H SIC MOSFET 1200V 80M TO-247-4L SemiQ	132	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	61 nC @ 20 V	+25V, -10V	1377 pF @ 1000 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
GP2T080A120U SIC MOSFET 1200V 80M TO-247-3L SemiQ	1,149	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1377 pF @ 1000 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GCMX040B120S1-E1 SIC 1200V 40M MOSFET SOT-227 SemiQ	100	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	121 nC @ 20 V	+25V, -10V	3185 pF @ 1000 V	-	242W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
GCMX020B120S1-E1 SIC 1200V 20M MOSFET SOT-227 SemiQ	30	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	113A (Tc)	20V	28mOhm @ 50A, 20V	4V @ 20mA	216 nC @ 20 V	+25V, -10V	5349 pF @ 1000 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
GP2T040A120H SIC MOSFET 1200V 40M TO-247-4L SemiQ	60	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
GCMX080B120S1-E1 SIC 1200V 80M MOSFET SOT-227 SemiQ	48	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1336 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
GCMS080B120S1-E1 SIC 1200V 80M MOSFET & 10A SBD S SemiQ	37	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1374 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
GP2T040A120U SIC MOSFET 1200V 40M TO-247-3L SemiQ	61	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GCMS040B120S1-E1 SIC 1200V 40M MOSFET & 15A SBD S SemiQ	3,323	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	124 nC @ 20 V	+25V, -10V	3110 pF @ 1000 V	-	242W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.