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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
STW50N65DM6 STMicroelectronics

STW50N65DM6

MOSFET N-CH 650V 33A TO247-3

STMicroelectronics

7,948 -
Datasheet MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 91mOhm @ 16.5A, 10V 4.75V @ 250µA 52.5 nC @ 10 V ±25V 52500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
STW58N60DM2AG STMicroelectronics

STW58N60DM2AG

MOSFET N-CH 600V 50A TO247

STMicroelectronics

3,263 -
Datasheet MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 90 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
STW12N170K5 STMicroelectronics

STW12N170K5

MOSFET N-CH 1700V 5A TO247

STMicroelectronics

6,332 -
Datasheet MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1700 V 5A (Tc) 10V 2.9Ohm @ 2.5A, 10V 5V @ 100µA 37 nC @ 10 V ±30V 1380 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
STW70N60DM2 STMicroelectronics

STW70N60DM2

N-channel 600 V, 37 mOhm typ., 6

STMicroelectronics

2,669 -
Datasheet MDmesh™ DM2 TO-247-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 42mOhm @ 33A, 10V 5V @ 250µA 121 nC @ 10 V ±25V 5508 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
STW75N65DM6-4 STMicroelectronics

STW75N65DM6-4

N-CHANNEL 650 V, 33 MOHM TYP., 7

STMicroelectronics

4,564 -
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 36mOhm @ 37.5A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5700 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
SCT040H65G3AG STMicroelectronics

SCT040H65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

5,733 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 15V, 18V 55mOhm @ 20A, 18V 4.2V @ 1mA 39.5 nC @ 18 V +18V, -5V 920 pF @ 400 V - 221W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
SCTW35N65G2V STMicroelectronics

SCTW35N65G2V

SICFET N-CH 650V 45A HIP247

STMicroelectronics

3,437 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 240W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
SCTW35N65G2VAG STMicroelectronics

SCTW35N65G2VAG

SICFET N-CH 650V 45A HIP247

STMicroelectronics

6,169 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 240W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
STW40N95DK5 STMicroelectronics

STW40N95DK5

MOSFET N-CHANNEL 950V 38A TO247

STMicroelectronics

2,536 -
Datasheet MDmesh™ DK5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 38A (Tc) 10V 130mOhm @ 19A, 10V 5V @ 100µA 100 nC @ 10 V ±30V 3480 pF @ 100 V - 450W (Tc) -55°C ~ 150°C - - Through Hole TO-247
SCTH40N120G2V-7 STMicroelectronics

SCTH40N120G2V-7

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics

8,172 -
Datasheet - - Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 100mOhm @ 20A, 18V 4.9V @ 1mA 61 nC @ 18 V +22V, -10V 1233 pF @ 800 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-7
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.