FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STF80N600K6 N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics	26	-	RFQ	Datasheet	ECOPACK®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 100µA	10.7 nC @ 10 V	±30V	540 pF @ 400 V	-	23W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
SCT055TO65G3 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	88	-	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STW65N045M9-4 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	90	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
SCT040TO65G3 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	100	-	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT040W65G3-4AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	75	-	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT027H65G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	-	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT040W120G3AG HIP-247 IN LINE HEAT SINK 2MM STMicroelectronics	100	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	15V, 18V	54mOhm @ 16A, 18V	4.2V @ 5mA	56 nC @ 18 V	+22V, -10V	1329 pF @ 800 V	-	312W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™
STW65N023M9-4 N-CHANNEL 650 V, 19.9 MOHM TYP., STMicroelectronics	59	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	95A (Tc)	10V	23mOhm @ 48A, 10V	4.2V @ 250µA	230 nC @ 10 V	±30V	8844 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
SCT025H120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	85	-	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT018H65G3AG H2PAK-7 STMicroelectronics	100	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	79.4 nC @ 18 V	+22V, -10V	2124 pF @ 400 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.