FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TSM126CX RFG MOSFET N-CH 600V 30MA SOT23 Taiwan Semiconductor Corporation	9,902	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Not For New Designs	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	600 V	30mA (Tc)	0V, 10V	800Ohm @ 16mA, 10V	1V @ 8µA	1.18 nC @ 4.5 V	±20V	51.42 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
TSM250N02CX 20V, 5.8A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	6,767	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	5.8A (Tc)	1.8V, 4.5V	25mOhm @ 4A, 4.5V	800mV @ 250µA	7.7 nC @ 4.5 V	±10V	535 pF @ 10 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23
TSM2309CX -60V, -3.1A, SINGLE P-CHANNEL PO Taiwan Semiconductor Corporation	3,289	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.1A (Tc)	4.5V, 10V	190mOhm @ 3A, 10V	2.5V @ 250µA	8.2 nC @ 10 V	±20V	425 pF @ 30 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23
TSM650P03CX -30V, -4.1A, SINGLE P-CHANNEL PO Taiwan Semiconductor Corporation	9,835	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.1A (Tc)	2.5V, 10V	65mOhm @ 4A, 10V	900mV @ 250µA	8 nC @ 4.5 V	±12V	810 pF @ 15 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23
TSM2N7000KCT A3G MOSFET N-CHANNEL 60V 300MA TO92 Taiwan Semiconductor Corporation	5,999	-	RFQ	Datasheet	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Cut Tape (CT)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Ta)	5V, 10V	5Ohm @ 100mA, 10V	2.5V @ 250µA	0.4 nC @ 4.5 V	±20V	60 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92
TSM4NC60CI C0G MOSFET N-CH 600V 4A ITO220AB Taiwan Semiconductor Corporation	8,026	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	2.5Ohm @ 1.3A, 10V	4V @ 250µA	18 nC @ 10 V	±30V	654 pF @ 50 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220AB
TSM2N60ECH C5G MOSFET N-CHANNEL 600V 2A TO251 Taiwan Semiconductor Corporation	8,846	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2A (Tc)	10V	4Ohm @ 1A, 10V	5V @ 250µA	9.5 nC @ 10 V	±30V	362 pF @ 25 V	-	52.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)
TSM900N10CH X0G MOSFET N-CH 100V 15A TO251 Taiwan Semiconductor Corporation	7,604	-	RFQ	Datasheet	-	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	15A (Tc)	4.5V, 10V	90mOhm @ 5A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	1480 pF @ 50 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)
TSM3446CX6 20V, 5.3A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	7,709	-	RFQ	Datasheet	-	SOT-23-6	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	5.3A (Tc)	2.5V, 4.5V	33mOhm @ 5.3A, 4.5V	1V @ 250µA	12.5 nC @ 4.5 V	±12V	700 pF @ 10 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-26
TSM240N03CX 30V, 6.5A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	7,309	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.5A (Tc)	4.5V, 10V	24mOhm @ 6A, 10V	2.5V @ 250µA	4.1 nC @ 4.5 V	±20V	345 pF @ 25 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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