FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TSM150P03PQ33 -30, -36, SINGLE P-CHANNEL Taiwan Semiconductor Corporation	9,974	-	RFQ	Datasheet	-	8-PowerWDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	10A (Ta), 36A (Tc)	4.5V, 10V	15mOhm @ 10A, 10V	2.5V @ 250µA	29.3 nC @ 10 V	±20V	1829 pF @ 15 V	-	2.3W (Ta), 27.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (3.1x3.1)
TSM680P06CP -60V, -18A, SINGLE P-CHANNEL POW Taiwan Semiconductor Corporation	4,254	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	18A (Tc)	4.5V, 10V	68mOhm @ 6A, 10V	2.2V @ 250µA	16.4 nC @ 10 V	±20V	870 pF @ 30 V	-	20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TSM480P06CP -60V, -20A, SINGLE P-CHANNEL POW Taiwan Semiconductor Corporation	3,414	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	20A (Tc)	4.5V, 10V	48mOhm @ 8A, 10V	2.2V @ 250µA	22.4 nC @ 10 V	±20V	1250 pF @ 30 V	-	-	-50°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TSM052NB03CR 30V, 90A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,020	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	17A (Ta), 90A (Tc)	4.5V, 10V	5.2mOhm @ 17A, 10V	2.5V @ 250µA	41 nC @ 10 V	±20V	2294 pF @ 15 V	-	3.1W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)
TSM3N80CH C5G MOSFET N-CHANNEL 800V 3A TO251 Taiwan Semiconductor Corporation	9,691	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	3A (Tc)	10V	4.2Ohm @ 1.5A, 10V	4V @ 250µA	19 nC @ 10 V	±30V	696 pF @ 25 V	-	94W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)
TSM060N03CP 30V, 70A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	9,034	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	6mOhm @ 20A, 10V	2.5V @ 250µA	11.1 nC @ 4.5 V	±20V	1160 pF @ 25 V	-	54W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TSM060N03ECP 30V, 70A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	9,085	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	70A (Tc)	4.5V, 10V	6mOhm @ 20A, 10V	2.5V @ 250µA	11.1 nC @ 4.5 V	±20V	1210 pF @ 25 V	-	54W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TSM900N10CP 100V, 15A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,725	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	15A (Tc)	4.5V, 10V	90mOhm @ 5A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	1480 pF @ 50 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TSM10NC60CF C0G MOSFET N-CH 600V 10A ITO220S Taiwan Semiconductor Corporation	5,834	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	750mOhm @ 2.5A, 10V	4.5V @ 250µA	33 nC @ 10 V	±30V	1652 pF @ 50 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220S
TSM120NA03CR RLG MOSFET N-CH 30V 39A 8PDFN Taiwan Semiconductor Corporation	3,914	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	39A (Tc)	4.5V, 10V	11.7mOhm @ 11A, 10V	2.5V @ 250µA	9.2 nC @ 10 V	±20V	562 pF @ 15 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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