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FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM60NB900CH Taiwan Semiconductor Corporation

TSM60NB900CH

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,171 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM60NB900CP Taiwan Semiconductor Corporation

TSM60NB900CP

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,003 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM088NA03CR RLG Taiwan Semiconductor Corporation

TSM088NA03CR RLG

MOSFET N-CH 30V 61A 8PDFN

Taiwan Semiconductor Corporation

4,259 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 8.8mOhm @ 13A, 10V 2.5V @ 250µA 12.6 nC @ 10 V ±20V 750 pF @ 15 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
TSM70NB1R4CP Taiwan Semiconductor Corporation

TSM70NB1R4CP

700V, 3A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,653 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 3A (Tc) 10V 1.4Ohm @ 1.2A, 10V 4V @ 250µA 7.4 nC @ 10 V ±30V 317 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM500N15CS Taiwan Semiconductor Corporation

TSM500N15CS

150V, 11A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,353 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 11A (Tc) 10V 50mOhm @ 4A, 10V 4V @ 250µA 20.5 nC @ 10 V ±20V 1123 pF @ 80 V - 12.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
TSM8N80CZ C0G Taiwan Semiconductor Corporation

TSM8N80CZ C0G

MOSFET N-CHANNEL 800V 8A TO220

Taiwan Semiconductor Corporation

3,171 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.05Ohm @ 4A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1921 pF @ 25 V - 40.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM2N60ECP ROG Taiwan Semiconductor Corporation

TSM2N60ECP ROG

MOSFET N-CHANNEL 600V 2A TO252

Taiwan Semiconductor Corporation

7,696 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4Ohm @ 1A, 10V 5V @ 250µA 9.5 nC @ 10 V ±30V 362 pF @ 25 V - 52.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60N600CH C5G Taiwan Semiconductor Corporation

TSM60N600CH C5G

MOSFET N-CHANNEL 600V 8A TO251

Taiwan Semiconductor Corporation

8,534 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM2N100CH C5G Taiwan Semiconductor Corporation

TSM2N100CH C5G

MOSFET N-CH 1000V 1.85A TO251

Taiwan Semiconductor Corporation

3,322 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.85A (Tc) 10V 8.5Ohm @ 900mA, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 625 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM80N1R2CH C5G Taiwan Semiconductor Corporation

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation

7,440 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.