FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI5476DU-T1-GE3MOSFET N-CH 60V 12A CHIPFET |
5,739 | - |
|
Datasheet | TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 34mOhm @ 4.6A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® ChipFET™ Single |
|
SQD50N04-5M6L_GE3MOSFET N-CH 40V 50A TO252AA |
4,111 | - |
|
Datasheet | TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2.5V @ 250µA | 75 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
|
SQJA76EP-T1_BE3N-CHANNEL 40-V (D-S) 175C MOSFET |
2,992 | - |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2.4mOhm @ 10A, 10V | 3.5V @ 250µA | 100 nC @ 10 V | ±20V | 5250 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SIRC16DP-T1-RE3N-CHANNEL 25-V (D-S) MOSFET W/SC |
5,880 | - |
|
Datasheet | - | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 57A (Ta), 60A (Tc) | 4.5V, 10V | 0.96mOhm @ 15A, 10V | 2.4V @ 250µA | 105 nC @ 10 V | +20V, -16V | 5150 pF @ 10 V | Schottky Diode (Body) | 5W (Ta), 54.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQ4850EY-T1_GE3MOSFET N-CH 60V 12A 8SO |
21,818 | - |
|
Datasheet | TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 22mOhm @ 6A, 5V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
|
SIJ450DP-T1-GE3N-CHANNEL 45 V (D-S) MOSFET POWE |
6,000 | - |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 36A (Ta), 113A (Tc) | 4.5V, 10V | 1.9mOhm @ 10A, 10V | 2.3V @ 250µA | 114 nC @ 10 V | +20V, -16V | 5920 pF @ 20 V | - | 4.8W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFD9014PBFMOSFET P-CH 60V 1.1A 4DIP |
5,876 | - |
|
Datasheet | - | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 10V | 500mOhm @ 660mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
|
IRFD210PBFMOSFET N-CH 200V 600MA 4DIP |
4,751 | - |
|
Datasheet | - | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
|
IRFD123PBFMOSFET N-CH 100V 1.3A 4DIP |
3,184 | - |
|
Datasheet | - | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.3A (Ta) | 10V | 270mOhm @ 780mA, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
IRFU214PBFMOSFET N-CH 250V 2.2A TO251AA |
2,855 | - |
|
Datasheet | - | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.
