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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIRS5700DP-T1-RE3 Vishay Siliconix

SIRS5700DP-T1-RE3

N-CHANNEL MOSFET

Vishay Siliconix

6,012 -
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Ta), 144A (Tc) 7.5V, 10V 5.6mOhm @ 20A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 5455 pF @ 75 V - 8.3W (Ta), 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIJH400E-T1-GE3 Vishay Siliconix

SIJH400E-T1-GE3

N-CHANNEL 40 V (D-S) 175 C MOSFE

Vishay Siliconix

6,661 -
Datasheet TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 57A (Ta), 608A (Tc) 4.5V, 10V 0.52mOhm @ 20A, 10V 2.4V @ 250µA 330 nC @ 10 V +20V, -16V 15050 pF @ 20 V - 3.3W (Ta), 385W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIJK5100E-T1-GE3 Vishay Siliconix

SIJK5100E-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET

Vishay Siliconix

8,510 -
Datasheet TrenchFET® 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 74A (Ta), 417A (Tc) 7.5V, 10V 1.4mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 11480 pF @ 50 V - 17W (Ta), 536W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK®10 x 12
MXP120A250FW-GE3 Vishay Siliconix

MXP120A250FW-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

8,641 -
Datasheet MaxSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 10.5A (Tc) 18V, 20V 313mOhm @ 4A, 20V 3.1V @ 10mA 20.3 nC @ 18 V +22V, -10V 447 pF @ 800 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3L
SIHP125N65E-GE3 Vishay Siliconix

SIHP125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

7,601 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB125N65E-GE3 Vishay Siliconix

SIHB125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

5,802 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHH125N65E-T1-GE3 Vishay Siliconix

SIHH125N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

9,506 -
Datasheet E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHK125N65E-T1-GE3 Vishay Siliconix

SIHK125N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,888 -
Datasheet E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
MXP120A250FL-GE3 Vishay Siliconix

MXP120A250FL-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

9,944 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
SIHG70N60EF-GE3 Vishay Siliconix

SIHG70N60EF-GE3

MOSFET N-CH 600V 70A TO247AC

Vishay Siliconix

7,948 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.