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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIR412DP-T1-GE3 Vishay Siliconix

SIR412DP-T1-GE3

MOSFET N-CH 25V 20A PPAK SO-8

Vishay Siliconix

5,521 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 20A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 600 pF @ 10 V - 3.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRLD024PBF Vishay Siliconix

IRLD024PBF

MOSFET N-CH 60V 2.5A 4DIP

Vishay Siliconix

9,065 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta) 4V, 5V 100mOhm @ 1.5A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
SI2308DS-T1-E3 Vishay Siliconix

SI2308DS-T1-E3

MOSFET N-CH 60V 2A SOT23-3

Vishay Siliconix

5,199 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4.5V, 10V 160mOhm @ 2A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 240 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
SI2309DS-T1-E3 Vishay Siliconix

SI2309DS-T1-E3

MOSFET P-CH 60V 1.25A SOT23-3

Vishay Siliconix

9,899 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.25A (Ta) 4.5V, 10V 340mOhm @ 1.25A, 10V 1V @ 250µA (Min) 12 nC @ 10 V ±20V - - 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
SI1046X-T1-GE3 Vishay Siliconix

SI1046X-T1-GE3

MOSFET N-CH 20V SC89-3

Vishay Siliconix

7,896 -
Datasheet TrenchFET® SC-89, SOT-490 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 606mA ( Ta) 1.8V, 4.5V 420mOhm @ 606mA, 4.5V 950mV @ 250µA 1.49 nC @ 5 V ±8V 66 pF @ 10 V - 250mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-89-3
2N7002-E3 Vishay Siliconix

2N7002-E3

MOSFET N-CH 60V 115MA TO236

Vishay Siliconix

2,452 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-236
SQ1470EH-T1-GE3 Vishay Siliconix

SQ1470EH-T1-GE3

MOSFET N-CH 30V 2.8A SC70

Vishay Siliconix

7,761 -
Datasheet - 6-TSSOP, SC-88, SOT-363 Digi-Reel® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.8A (Tc) - 65mOhm @ 3.8A, 4.5V 1.6V @ 250µA 6.6 nC @ 4.5 V - 610 pF @ 25 V - - - - - Surface Mount SC-70-6
SIHD7N60E-E3 Vishay Siliconix

SIHD7N60E-E3

MOSFET N-CH 600V 7A DPAK

Vishay Siliconix

9,975 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRF9Z14LPBF Vishay Siliconix

IRF9Z14LPBF

MOSFET P-CH 60V 6.7A I2PAK

Vishay Siliconix

5,845 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
IRFBC30ALPBF Vishay Siliconix

IRFBC30ALPBF

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix

9,553 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.