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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SQJA78EP-T1_GE3 Vishay Siliconix

SQJA78EP-T1_GE3

MOSFET N-CH 80V 72A PPAK SO-8

Vishay Siliconix

2,797 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 72A (Tc) 10V 5.3mOhm @ 10A, 10V 3.3V @ 250µA 95 nC @ 10 V ±20V 5100 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
IRF610SPBF Vishay Siliconix

IRF610SPBF

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix

298 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF530STRRPBF Vishay Siliconix

IRF530STRRPBF

MOSFET N-CH 100V 14A TO263

Vishay Siliconix

197 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI7112DN-T1-GE3 Vishay Siliconix

SI7112DN-T1-GE3

MOSFET N-CH 30V 11.3A PPAK1212-8

Vishay Siliconix

10,268 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Tc) 4.5V, 10V 7.5mOhm @ 17.8A, 10V 1.5V @ 250µA 27 nC @ 4.5 V ±12V 2610 pF @ 15 V - 1.5W (Ta) -50°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
IRFI620GPBF Vishay Siliconix

IRFI620GPBF

MOSFET N-CH 200V 4.1A TO220-3

Vishay Siliconix

575 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIRA02DP-T1-GE3 Vishay Siliconix

SIRA02DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix

7,498 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2mOhm @ 15A, 10V 2.2V @ 250µA 117 nC @ 10 V +20V, -16V 6150 pF @ 15 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRFR320PBF Vishay Siliconix

IRFR320PBF

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix

2,725 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
SIR158DP-T1-RE3 Vishay Siliconix

SIR158DP-T1-RE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix

1,654 -
Datasheet TrenchFET® Gen III PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.8mOhm @ 20A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 4980 pF @ 15 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQJ850EP-T1_GE3 Vishay Siliconix

SQJ850EP-T1_GE3

MOSFET N-CH 60V 24A PPAK SO-8

Vishay Siliconix

8,244 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Tc) 4.5V, 10V 23mOhm @ 10.3A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1225 pF @ 30 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
SIHD12N50E-GE3 Vishay Siliconix

SIHD12N50E-GE3

MOSFET N-CH 550V 10.5A DPAK

Vishay Siliconix

2,939 -
Datasheet E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 550 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TA) - - Surface Mount DPAK
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.