FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SQM120N04-1M9_GE3 MOSFET N-CH 40V 120A TO263 Vishay Siliconix	6,849	-	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	10V	1.9mOhm @ 30A, 10V	3.5V @ 250µA	270 nC @ 10 V	±20V	8790 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFI744G MOSFET N-CH 450V 4.9A TO220-3 Vishay Siliconix	9,539	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	450 V	4.9A (Tc)	10V	630mOhm @ 2.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	1400 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRFR9210 MOSFET P-CH 200V 1.9A DPAK Vishay Siliconix	8,612	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFD9020 MOSFET P-CH 60V 1.6A 4DIP Vishay Siliconix	9,760	-	RFQ	Datasheet	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	10V	280mOhm @ 960mA, 10V	4V @ 1µA	19 nC @ 10 V	±20V	570 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	4-HVMDIP
IRFR9210TR MOSFET P-CH 200V 1.9A DPAK Vishay Siliconix	4,964	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFU320 MOSFET N-CH 400V 3.1A TO251AA Vishay Siliconix	9,540	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA
IRFU9210 MOSFET P-CH 200V 1.9A TO251AA Vishay Siliconix	6,811	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA
IRFR9210TRL MOSFET P-CH 200V 1.9A DPAK Vishay Siliconix	3,433	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
SI7448DP-T1-E3 MOSFET N-CH 20V 13.4A PPAK SO-8 Vishay Siliconix	7,351	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	13.4A (Ta)	2.5V, 4.5V	6.5mOhm @ 22A, 4.5V	1.5V @ 250µA	50 nC @ 4.5 V	±12V	-	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SI8407DB-T2-E1 MOSFET P-CH 20V 5.8A 6MICRO FOOT Vishay Siliconix	3,771	-	RFQ	Datasheet	TrenchFET®	6-MICRO FOOT®CSP	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	5.8A (Ta)	1.8V, 4.5V	27mOhm @ 1A, 4.5V	900mV @ 350µA	50 nC @ 4.5 V	±8V	-	-	1.47W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-Micro Foot™ (2.4x2)

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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