FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF620S MOSFET N-CH 200V 5.2A D2PAK Vishay Siliconix	4,936	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	10V	800mOhm @ 3.1A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	3W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9510S MOSFET P-CH 100V 4A D2PAK Vishay Siliconix	9,096	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHG11N80E-GE3 MOSFET N-CH 800V 12A TO247AC Vishay Siliconix	9,226	-	RFQ	Datasheet	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	12A (Tc)	10V	440mOhm @ 5.5A, 10V	4V @ 250µA	88 nC @ 10 V	±30V	1670 pF @ 100 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
SIR862DP-T1-GE3 MOSFET N-CH 25V 50A PPAK SO-8 Vishay Siliconix	8,133	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	50A (Tc)	4.5V, 10V	2.8mOhm @ 15A, 10V	2.3V @ 250µA	90 nC @ 10 V	±20V	3800 pF @ 10 V	-	5.2W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
IRF9510STRL MOSFET P-CH 100V 4A D2PAK Vishay Siliconix	2,902	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIRS700DP-T1-RE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	5,207	-	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100 V	30A (Ta), 127A (Tc)	7.5V, 10V	3.5mOhm @ 20A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	5950 pF @ 50 V	-	7.4W (Ta),132W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
IRF737LC MOSFET N-CH 300V 6.1A TO220AB Vishay Siliconix	7,730	-	RFQ	Datasheet	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	300 V	6.1A (Tc)	10V	750mOhm @ 3.7A, 10V	4V @ 250µA	17 nC @ 10 V	±30V	430 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFBC40LPBF MOSFET N-CH 600V 6.2A TO262-3 Vishay Siliconix	6,750	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	10V	1.2Ohm @ 3.7A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.1W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262-3
SI3459DV-T1-E3 MOSFET P-CH 60V 2.2A 6TSOP Vishay Siliconix	5,827	-	RFQ	Datasheet	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	2.2A (Tc)	4.5V, 10V	220mOhm @ 2.2A, 10V	1V @ 250µA (Min)	14 nC @ 10 V	±20V	-	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP
SI4170DY-T1-GE3 MOSFET N-CH 30V 30A 8SO Vishay Siliconix	8,553	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	3.5mOhm @ 15A, 10V	2.6V @ 250µA	100 nC @ 10 V	±20V	4355 pF @ 15 V	-	3W (Ta), 6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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