FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SUM110N04-2M1P-E3MOSFET N-CH 40V 29A/110A TO263 |
2,734 | - |
|
Datasheet | TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Ta), 110A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 360 nC @ 10 V | ±20V | 18800 pF @ 20 V | - | 3.13W (Ta), 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHW47N60EF-GE3MOSFET N-CH 600V 47A TO247AD |
7,153 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 225 nC @ 10 V | ±30V | 4854 pF @ 100 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
SIHW73N60E-GE3MOSFET N-CH 600V 73A TO247AD |
5,298 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±20V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
SI4864DY-T1-GE3MOSFET N-CH 20V 17A 8SO |
7,007 | - |
|
Datasheet | TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 17A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 25A, 4.5V | 2V @ 250µA | 70 nC @ 4.5 V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SQM200N04-1M1L_GE3MOSFET N-CH 40V 200A TO263-7 |
8,224 | - |
|
Datasheet | TrenchFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.5V @ 250µA | 413 nC @ 10 V | ±20V | 20655 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IRFPS29N60LPBFMOSFET N-CH 600V 29A SUPER247 |
8,139 | - |
|
Datasheet | - | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 250µA | 220 nC @ 10 V | ±30V | 6160 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
IRFPF30MOSFET N-CH 900V 3.6A TO247-3 |
8,337 | - |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHH21N60E-T1-GE3MOSFET N-CH 600V 20A PPAK 8 X 8 |
2,099 | - |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 83 nC @ 10 V | ±30V | 2015 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
IRFPG30MOSFET N-CH 1000V 3.1A TO247-3 |
6,836 | - |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHH11N65E-T1-GE3MOSFET N-CH 650V 12A PPAK 8 X 8 |
6,942 | - |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 363mOhm @ 6A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±30V | 1257 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.