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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SUM110N04-2M1P-E3 Vishay Siliconix

SUM110N04-2M1P-E3

MOSFET N-CH 40V 29A/110A TO263

Vishay Siliconix

2,734 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 110A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.5V @ 250µA 360 nC @ 10 V ±20V 18800 pF @ 20 V - 3.13W (Ta), 312W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHW47N60EF-GE3 Vishay Siliconix

SIHW47N60EF-GE3

MOSFET N-CH 600V 47A TO247AD

Vishay Siliconix

7,153 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 65mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
SIHW73N60E-GE3 Vishay Siliconix

SIHW73N60E-GE3

MOSFET N-CH 600V 73A TO247AD

Vishay Siliconix

5,298 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 39mOhm @ 36A, 10V 4V @ 250µA 362 nC @ 10 V ±20V 7700 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
SI4864DY-T1-GE3 Vishay Siliconix

SI4864DY-T1-GE3

MOSFET N-CH 20V 17A 8SO

Vishay Siliconix

7,007 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 17A (Ta) 2.5V, 4.5V 3.5mOhm @ 25A, 4.5V 2V @ 250µA 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SQM200N04-1M1L_GE3 Vishay Siliconix

SQM200N04-1M1L_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix

8,224 -
Datasheet TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2.5V @ 250µA 413 nC @ 10 V ±20V 20655 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
IRFPS29N60LPBF Vishay Siliconix

IRFPS29N60LPBF

MOSFET N-CH 600V 29A SUPER247

Vishay Siliconix

8,139 -
Datasheet - TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 250µA 220 nC @ 10 V ±30V 6160 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
IRFPF30 Vishay Siliconix

IRFPF30

MOSFET N-CH 900V 3.6A TO247-3

Vishay Siliconix

8,337 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHH21N60E-T1-GE3 Vishay Siliconix

SIHH21N60E-T1-GE3

MOSFET N-CH 600V 20A PPAK 8 X 8

Vishay Siliconix

2,099 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 83 nC @ 10 V ±30V 2015 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
IRFPG30 Vishay Siliconix

IRFPG30

MOSFET N-CH 1000V 3.1A TO247-3

Vishay Siliconix

6,836 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHH11N65E-T1-GE3 Vishay Siliconix

SIHH11N65E-T1-GE3

MOSFET N-CH 650V 12A PPAK 8 X 8

Vishay Siliconix

6,942 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 363mOhm @ 6A, 10V 4V @ 250µA 68 nC @ 10 V ±30V 1257 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.