FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFR224TRR MOSFET N-CH 250V 3.8A DPAK Vishay Siliconix	3,505	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250 V	3.8A (Tc)	10V	1.1Ohm @ 2.3A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFR9014NTR MOSFET P-CH 60V 5.1A DPAK Vishay Siliconix	6,931	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5.1A (Tc)	10V	500mOhm @ 3.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFR9014NTRR MOSFET P-CH 60V 5.1A DPAK Vishay Siliconix	6,141	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5.1A (Tc)	10V	500mOhm @ 3.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFR9014TRR MOSFET P-CH 60V 5.1A DPAK Vishay Siliconix	7,911	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5.1A (Tc)	10V	500mOhm @ 3.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFR9210TRR MOSFET P-CH 200V 1.9A DPAK Vishay Siliconix	5,937	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFR9214TRR MOSFET P-CH 250V 2.7A DPAK Vishay Siliconix	2,285	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	250 V	2.7A (Tc)	10V	3Ohm @ 1.7A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	220 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRFSL31N20DTRL MOSFET N-CH 200V 31A I2PAK Vishay Siliconix	7,611	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	31A (Tc)	10V	82mOhm @ 18A, 10V	5.5V @ 250µA	110 nC @ 10 V	±30V	2370 pF @ 25 V	-	3.1W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRFSL31N20DTRR MOSFET N-CH 200V 31A I2PAK Vishay Siliconix	5,204	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	31A (Tc)	10V	82mOhm @ 18A, 10V	5.5V @ 250µA	110 nC @ 10 V	±30V	2370 pF @ 25 V	-	3.1W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRFSL9N60ATRR MOSFET N-CH 600V 9.2A I2PAK Vishay Siliconix	9,186	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.2A (Tc)	10V	750mOhm @ 5.5A, 10V	4V @ 250µA	49 nC @ 10 V	±30V	1400 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRFZ14L MOSFET N-CH 60V 10A TO262-3 Vishay Siliconix	4,320	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	10V	200mOhm @ 6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262-3

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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