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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHB28N60EF-GE3 Vishay Siliconix

SIHB28N60EF-GE3

MOSFET N-CH 600V 28A D2PAK

Vishay Siliconix

1,229 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
SIHP35N60EF-GE3 Vishay Siliconix

SIHP35N60EF-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix

728 -
Datasheet EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB053N60E-GE3 Vishay Siliconix

SIHB053N60E-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix

1,005 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 54mOhm @ 26.5A, 10V 5V @ 250µA 92 nC @ 10 V ±30V 3722 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHG30N60E-GE3 Vishay Siliconix

SIHG30N60E-GE3

MOSFET N-CH 600V 29A TO247AC

Vishay Siliconix

500 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIJH5800E-T1-GE3 Vishay Siliconix

SIJH5800E-T1-GE3

N-CHANNEL 80 V (D-S) 175C MOSFET

Vishay Siliconix

3,786 -
Datasheet TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta), 302A (Tc) 7.5V, 10V 1.35mOhm @ 20A, 10V 4V @ 250µA 155 nC @ 10 V ±20V 7730 pF @ 40 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHG100N60E-GE3 Vishay Siliconix

SIHG100N60E-GE3

MOSFET N-CH 600V 30A TO247AC

Vishay Siliconix

359 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SUP85N10-10-E3 Vishay Siliconix

SUP85N10-10-E3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix

315 -
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFPF50PBF Vishay Siliconix

IRFPF50PBF

MOSFET N-CH 900V 6.7A TO247-3

Vishay Siliconix

436 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.7A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2900 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHP052N60EF-GE3 Vishay Siliconix

SIHP052N60EF-GE3

MOSFET EF SERIES TO-220AB

Vishay Siliconix

934 -
Datasheet EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 52mOhm @ 23A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 3380 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB055N60EF-GE3 Vishay Siliconix

SIHB055N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

744 -
Datasheet EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 55mOhm @ 26.5A, 10V 5V @ 250µA 95 nC @ 10 V ±30V 3707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.