FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFR120TRRPBF-BE3 MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	1,095	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	-	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
SQJ403BEEP-T1_BE3 P-CHANNEL 30-V (D-S) 175C MOSFET Vishay Siliconix	2,702	-	RFQ	Datasheet	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	8.5mOhm @ 10A, 10V	2.5V @ 250µA	164 nC @ 10 V	±20V	-	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
IRFU9110PBF MOSFET P-CH 100V 3.1A TO251AA Vishay Siliconix	1,877	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA
SIJ128LDP-T1-GE3 MOSFET N-CH 80V 10.2A/25.5A PPAK Vishay Siliconix	11,989	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	10.2A (Ta), 25.5A (Tc)	4.5V, 10V	15.6mOhm @ 10A, 10V	2.5V @ 250µA	30 nC @ 10 V	±20V	1250 pF @ 40 V	-	3.6W (Ta), 22.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SIHB5N80AE-GE3 E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix	655	-	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.4A (Tc)	10V	1.35Ohm @ 1.5A, 10V	4V @ 250µA	16.5 nC @ 10 V	±30V	321 pF @ 100 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SI7386DP-T1-GE3 MOSFET N-CH 30V 12A PPAK SO-8 Vishay Siliconix	28,608	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12A (Ta)	4.5V, 10V	7mOhm @ 19A, 10V	2.5V @ 250µA	18 nC @ 4.5 V	±20V	-	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SIHA14N60E-GE3 N-CHANNEL 600V Vishay Siliconix	2,920	-	RFQ	Datasheet	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
IRFR9120TRLPBF-BE3 MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	8,674	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IRFR9120TRLPBF MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	5,380	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
IRF9630PBF-BE3 MOSFET P-CH 200V 6.5A TO220AB Vishay Siliconix	1,798	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	6.5A (Tc)	-	800mOhm @ 3.9A, 10V	4V @ 250µA	29 nC @ 10 V	±20V	700 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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