FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters

Stock & Datasheets Review availability and technical references

RFQ & BOM Support Send your target MPN, quantity or BOM

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SIR166DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix	2,380	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	3.2mOhm @ 15A, 10V	2.2V @ 250µA	77 nC @ 10 V	±20V	3340 pF @ 15 V	-	5W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SISS60DN-T1-GE3 MOSFET N-CH 30V 50.1/181.8A PPAK Vishay Siliconix	5,995	-	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	50.1A (Ta), 181.8A (Tc)	4.5V, 10V	1.31mOhm @ 20A, 10V	2.5V @ 250µA	85.5 nC @ 10 V	+16V, -12V	3960 pF @ 15 V	Schottky Diode (Body)	5.1W (Ta), 65.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S
SISS66DN-T1-GE3 MOSFET N-CH 30V 49.1/178.3A PPAK Vishay Siliconix	4,562	-	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	49.1A (Ta), 178.3A (Tc)	4.5V, 10V	1.38mOhm @ 20A, 10V	2.5V @ 250µA	85.5 nC @ 10 V	+20V, -16V	3327 pF @ 15 V	Schottky Diode (Body)	5.1W (Ta), 65.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S
SIHU7N60E-GE3 MOSFET N-CH 600V 7A IPAK Vishay Siliconix	2,990	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	600mOhm @ 3.5A, 10V	4V @ 250µA	40 nC @ 10 V	±30V	680 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA
IRFR9014PBF-BE3 P-CHANNEL 60V Vishay Siliconix	2,968	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5.1A (Tc)	10V	500mOhm @ 3.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
SISS5112DN-T1-GE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	11,904	-	RFQ	Datasheet	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	11A (Ta), 40.7A (Tc)	7.5V, 10V	14.9mOhm @ 10A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	790 pF @ 50 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S
IRFR220PBF-BE3 N-CHANNEL 200V Vishay Siliconix	3,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	4.8A (Tc)	10V	800mOhm @ 2.9A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IRFR9110TRLPBF MOSFET P-CH 100V 3.1A DPAK Vishay Siliconix	3,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK
SIHU4N80AE-GE3 MOSFET N-CH 800V 4.3A IPAK Vishay Siliconix	2,994	-	RFQ	Datasheet	E	TO-251-3 Long Leads, IPAK, TO-251AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	4V @ 250µA	32 nC @ 10 V	±30V	622 pF @ 100 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK (TO-251)
SISS5110DN-T1-GE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	12,000	-	RFQ	Datasheet	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	13.4A (Ta), 46.4A (Tc)	7.5V, 10V	8.9mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±25V	920 pF @ 50 V	-	4.8W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S

WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing

Send part number & quantity Request a Quote

Need sourcing assistance? Contact Sales

FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.