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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHP17N80E-GE3 Vishay Siliconix

SIHP17N80E-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix

1,000 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHA150N60E-GE3 Vishay Siliconix

SIHA150N60E-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix

2,000 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHA22N60AE-GE3 Vishay Siliconix

SIHA22N60AE-GE3

N-CHANNEL 600V

Vishay Siliconix

979 -
Datasheet E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IRFIBF30GPBF Vishay Siliconix

IRFIBF30GPBF

MOSFET N-CH 900V 1.9A TO220-3

Vishay Siliconix

888 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 900 V 1.9A (Tc) 10V 3.7Ohm @ 1.1A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIHA155N60EF-GE3 Vishay Siliconix

SIHA155N60EF-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix

1,842 -
Datasheet EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 89mOhm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 1465 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHP150N60E-GE3 Vishay Siliconix

SIHP150N60E-GE3

E SERIES POWER MOSFET TO-220AB,

Vishay Siliconix

1,985 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHP155N60EF-GE3 Vishay Siliconix

SIHP155N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

1,995 -
Datasheet EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 1465 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB17N80E-GE3 Vishay Siliconix

SIHB17N80E-GE3

MOSFET N-CH 800V 15A D2PAK

Vishay Siliconix

888 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB11N80E-GE3 Vishay Siliconix

SIHB11N80E-GE3

MOSFET N-CH 800V 12A D2PAK

Vishay Siliconix

4,800 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHG22N60EF-GE3 Vishay Siliconix

SIHG22N60EF-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix

793 -
Datasheet EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.