FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FDMC7672 MOSFET N-CH 30V 16.9A/20A 8MLP Fairchild Semiconductor	9,009	-	RFQ	Datasheet	PowerTrench®, SyncFET™	8-PowerWDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	16.9A (Ta), 20A (Tc)	4.5V, 10V	5.7mOhm @ 16.9A, 10V	3V @ 250µA	57 nC @ 10 V	±20V	3890 pF @ 15 V	-	2.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-MLP (3.3x3.3)
FDD8878 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	30,452	-	RFQ	Datasheet	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	4.5V, 10V	15mOhm @ 35A, 10V	2.5V @ 250µA	26 nC @ 10 V	±20V	880 pF @ 15 V	-	40W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
FDD6612A POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor	208,779	-	RFQ	Datasheet	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9.5A (Ta), 30A (Tc)	4.5V, 10V	20mOhm @ 9.5A, 10V	3V @ 250µA	9.4 nC @ 5 V	±20V	660 pF @ 15 V	-	2.8W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
FDS8876 MOSFET N-CH 30V 12.5A 8SOIC Fairchild Semiconductor	1,312	-	RFQ	Datasheet	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	8.2mOhm @ 12.5A, 10V	2.5V @ 250µA	36 nC @ 10 V	±20V	1650 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
FDD8782 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	119,700	-	RFQ	Datasheet	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	35A (Tc)	4.5V, 10V	11mOhm @ 35A, 10V	2.5V @ 250µA	25 nC @ 10 V	±20V	1220 pF @ 13 V	-	50W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
FDD8882 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	2,490	-	RFQ	Datasheet	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.6A (Ta), 55A (Tc)	4.5V, 10V	11.5mOhm @ 35A, 10V	2.5V @ 250µA	33 nC @ 10 V	±20V	1260 pF @ 15 V	-	55W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
FDS8449-G FDS8449 - 40V MOSFET N CHANNEL Fairchild Semiconductor	1,646	-	RFQ	Datasheet	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	7.6A (Ta)	4.5V, 10V	29mOhm @ 7.6A, 10V	3V @ 250µA	11 nC @ 5 V	±20V	760 pF @ 20 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
FDS6298 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	244,466	-	RFQ	Datasheet	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	13A (Ta)	4.5V, 10V	9mOhm @ 13A, 10V	3V @ 250µA	14 nC @ 5 V	±20V	1108 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
FDMS7672 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	3,000	-	RFQ	Datasheet	PowerTrench®	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	19A (Ta), 28A (Tc)	4.5V, 10V	5mOhm @ 19A, 10V	3V @ 250µA	44 nC @ 10 V	±20V	2960 pF @ 15 V	-	2.5W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Power56
NDP4050 NDP4050 - 15A, 50V, 0.1OHM, N-CH Fairchild Semiconductor	1,980	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50 V	15A (Tc)	-	100mOhm @ 7.5A, 10V	4V @ 250µA	17 nC @ 10 V	-	450 pF @ 25 V	-	-	-	-	-	Through Hole	TO-220-3

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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