FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FCH35N60MOSFET N-CH 600V 35A TO247-3 |
8,123 | - |
|
Datasheet | SuperMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 98mOhm @ 17.5A, 10V | 5V @ 250µA | 181 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 312.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
FDD6530AMOSFET N-CH 20V 21A TO252 |
3,876 | - |
|
Datasheet | PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 21A (Ta) | 2.5V, 4.5V | 32mOhm @ 8A, 4.5V | 1.2V @ 250µA | 9 nC @ 4.5 V | ±8V | 710 pF @ 10 V | - | 3.3W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDS86540SMALL SIGNAL FIELD-EFFECT TRANSI |
8,040 | - |
|
Datasheet | PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Ta) | 8V, 10V | 4.5mOhm @ 18A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 6410 pF @ 30 V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FCPF36N60NTMOSFET N-CH 600V 36A TO220F |
4,064 | - |
|
Datasheet | SupreMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±30V | 4785 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDD3706POWER FIELD-EFFECT TRANSISTOR, 1 |
2,045 | - |
|
Datasheet | PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 14.7A (Ta), 50A (Tc) | 2.5V, 10V | 9mOhm @ 16.2A, 10V | 1.5V @ 250µA | 23 nC @ 4.5 V | ±12V | 1882 pF @ 10 V | - | 3.8W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDD8874POWER FIELD-EFFECT TRANSISTOR, 3 |
4,034 | - |
|
Datasheet | PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 116A (Tc) | 4.5V, 10V | 5.1mOhm @ 35A, 10V | 2.5V @ 250µA | 72 nC @ 10 V | ±20V | 2990 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQP3P20POWER FIELD-EFFECT TRANSISTOR, 2 |
6,074 | - |
|
Datasheet | QFET® | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 2.8A (Tc) | 10V | 2.7Ohm @ 1.4A, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDMC8327LPOWER FIELD-EFFECT TRANSISTOR, 1 |
5,102 | - |
|
Datasheet | PowerTrench® | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Ta), 14A (Tc) | 4.5V, 10V | 9.7mOhm @ 12A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1850 pF @ 20 V | - | 2.3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
|
FQP9N90CPOWER FIELD-EFFECT TRANSISTOR, 8 |
8,277 | - |
|
Datasheet | QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | 1.4Ohm @ 4A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 2730 pF @ 25 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SI3443DVMOSFET P-CH 20V 4.4A MICRO6 |
5,347 | - |
|
Datasheet | HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15 nC @ 4.5 V | ±12V | 1079 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.