Single IGBTs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT85GR120B2 IGBT NPT 1200V 170A TMAX Microchip Technology	28	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	NPT	1200 V	170 A	340 A	3.2V @ 15V, 85A	962 W	6mJ (on), 3.8mJ (off)	Standard	660 nC	43ns/300ns	600V, 85A, 4.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™
AFGY160T65SPD-B4 IGBT TRENCH FS 650V 240A TO247-3 onsemi	28	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	240 A	480 A	2.05V @ 15V, 160A	882 W	12.4mJ (on), 5.7mJ (off)	Standard	245 nC	53ns/98ns	400V, 160A, 5Ohm, 15V	132 ns	-55°C ~ 175°C (TJ)	Automotive	AEC-Q100	Through Hole	TO-247-3
APT50GN120L2DQ2G IGBT NPT FIELD STOP 1200V 134A Microchip Technology	35	-	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	NPT, Trench Field Stop	1200 V	134 A	150 A	2.1V @ 15V, 50A	543 W	4495µJ (off)	Standard	315 nC	28ns/320ns	800V, 50A, 2.2Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
IXXR110N65B4H1 IGBT 650V 150A 455W ISOPLUS247 IXYS	28	-	RFQ	Datasheet	GenX4™, XPT™	TO-247-3	Tube	Active	PT	650 V	150 A	460 A	2.2V @ 15V, 110A	455 W	2.2mJ (on), 1.05mJ (off)	Standard	183 nC	38ns/156ns	400V, 55A, 2Ohm, 15V	100 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	ISOPLUS247™
APT65GP60L2DQ2G IGBT PT 600V 198A Microchip Technology	13	-	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	PT	600 V	198 A	250 A	2.7V @ 15V, 65A	833 W	605µJ (on), 895µJ (off)	Standard	210 nC	30ns/90ns	400V, 65A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
IXBA16N170AHV REVERSE CONDUCTING IGBT IXYS	8	-	RFQ	Datasheet	BIMOSFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	-	1700 V	16 A	40 A	6V @ 15V, 10A	150 W	2.5mJ (off)	Standard	65 nC	15ns/250ns	1360V, 10A, 10Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV
IXXK300N60B3 IGBT 600V 550A 2300W TO264 IXYS	9	-	RFQ	Datasheet	GenX3™, XPT™	TO-264-3, TO-264AA	Tube	Active	PT	600 V	550 A	1140 A	1.6V @ 15V, 100A	2300 W	3.45mJ (on), 2.86mJ (off)	Standard	460 nC	50ns/190ns	400V, 100A, 1Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXXK)
STGD4H60DF IGBT TRENCH FS 600V 8A DPAK STMicroelectronics	256	-	RFQ	Datasheet	H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Trench Field Stop	600 V	8 A	16 A	1.95V @ 15V, 3A	75 W	68µJ (on), 45µJ (off)	Standard	35 nC	35ns/121ns	400V, 3A, 47Ohm, 15V	73 ns	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK (TO-252) type C2
GT20J341,S4X(S DISCRETE IGBT TRANSISTOR TO-220S Toshiba Semiconductor and Storage	75	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	-	600 V	20 A	80 A	2V @ 15V, 20A	45 W	500µJ (on), 400µJ (off)	Standard	-	60ns/240ns	300V, 20A, 33Ohm, 15V	90 ns	150°C (TJ)	-	-	Through Hole	TO-220SIS
STGWA30M65DF2AG AUTOMOTIVE-GRADE TRENCH GATE FIE STMicroelectronics	50	-	RFQ	Datasheet	M	TO-247-3	Tube	Active	Trench Field Stop	650 V	87 A	120 A	2V @ 15V, 30A	441 W	756µJ (on), 1.057mJ (off)	Standard	81.6 nC	21.6ns/138ns	400V, 30A, 10Ohm, 15V	151 ns	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247 Long Leads
GT30J65MRB,S1E 650V SILICON N-CHANNEL IGBT, TO- Toshiba Semiconductor and Storage	64	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	-	650 V	60 A	-	1.8V @ 15V, 30A	200 W	1.4mJ (on), 220µJ (off)	Standard	70 nC	75ns/400ns	400V, 15A, 56Ohm, 15V	200 ns	175°C (TJ)	-	-	Through Hole	TO-3P(N)
STGWA25IH135DF2 IGBT TRENCH FS 1.35KV 50A TO247 STMicroelectronics	46	-	RFQ	Datasheet	IH2	TO-247-3	Tube	Active	Trench Field Stop	1350 V	50 A	100 A	2.2V @ 15V, 20A	340 W	1mJ (off)	Standard	166 nC	-	600V, 20A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 Long Leads
RGW40NL65HRBTL IGBT TRENCH FS 650V 48A TO263L Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Trench Field Stop	650 V	48 A	80 A	1.9V @ 15V, 20A	144 W	110µJ (on), 160µJ (off)	Standard	59 nC	33ns/129ns	400V, 10A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263L
GT40QR21(STA1,E,D IGBT 1200V 40A TO3P Toshiba Semiconductor and Storage	82	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	-	1200 V	40 A	80 A	2.7V @ 15V, 40A	230 W	-, 290µJ (off)	Standard	-	-	280V, 40A, 10Ohm, 20V	600 ns	175°C (TJ)	-	-	Through Hole	TO-3P(N)
RGW50NL65DHRBTL IGBT TRENCH FS 650V 57A TO263L Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Trench Field Stop	650 V	57 A	100 A	1.9V @ 15V, 25A	165 W	110µJ (on), 230µJ (off)	Standard	73 nC	31ns/119ns	400V, 12.5A, 10Ohm, 15V	71 ns	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263L
RGS50NL65HRBTL IGBT TRENCH FS 650V 50A TO263L Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Trench Field Stop	650 V	50 A	75 A	2.1V @ 15V, 25A	206 W	810µJ (on), 650µJ (off)	Standard	31 nC	28ns/91ns	400V, 25A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263L
RGW60NL65DHRBTL IGBT TRENCH FS 650V 67A TO263L Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Trench Field Stop	650 V	67 A	120 A	1.9V @ 15V, 30A	187 W	180µJ (on), 250µJ (off)	Standard	84 nC	34ns/122ns	400V, 15A, 10Ohm, 15V	96 ns	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263L
GT50N322A IGBT 1000V 50A TO3P Toshiba Semiconductor and Storage	52	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tray	Active	-	1000 V	50 A	120 A	2.8V @ 15V, 60A	156 W	-	Standard	-	-	-	800 ns	150°C (TJ)	-	-	Through Hole	TO-3P(N)
GT50JR21(STA1,E,S) PB-F IGBT / TRANSISTOR TO-3PN(OS Toshiba Semiconductor and Storage	37	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	-	600 V	50 A	100 A	2V @ 15V, 50A	230 W	-	Standard	-	-	-	-	175°C (TJ)	-	-	Through Hole	TO-3P(N)
APT25GP90BG IGBT PT 900V 72A TO247 Microchip Technology	51	-	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	PT	900 V	72 A	110 A	3.9V @ 15V, 25A	417 W	370µJ (off)	Standard	110 nC	13ns/55ns	600V, 25A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]

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