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Diode Arrays

Browse available Diode Arrays part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
VS-U5FX120FA60 Vishay General Semiconductor - Diodes Division

VS-U5FX120FA60

DIODE MODULE GP 600V 60A SOT-227

Vishay General Semiconductor - Diodes Division

154 -
Datasheet FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 60A (DC) 2.2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 63 ns 40 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
VS-U5FH150FA60 Vishay General Semiconductor - Diodes Division

VS-U5FH150FA60

DIODE MODULE GP 600V 75A SOT-227

Vishay General Semiconductor - Diodes Division

160 -
Datasheet FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 75A (DC) 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 50 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
VS-U5FX150FA60 Vishay General Semiconductor - Diodes Division

VS-U5FX150FA60

DIODE MODULE GP 600V 75A SOT-227

Vishay General Semiconductor - Diodes Division

126 -
Datasheet FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 75A (DC) 2.2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
PCDH40120CCG1_T0_00601 Panjit International Inc.

PCDH40120CCG1_T0_00601

DIODE ARR SIC 1200V 20A TO-247AD

Panjit International Inc.

1,500 -
Datasheet - TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 20A (DC) 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247AD
IV1D12040U2 Inventchip

IV1D12040U2

DIODE ARR SIC 1200V 102A TO2472

Inventchip

120 -
Datasheet - TO-247-2 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 102A (DC) 1.8 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247-2
1N4148UBCA/TR Microchip Technology

1N4148UBCA/TR

DIODE ARRAY GP 75V 200MA UB

Microchip Technology

200 -
Datasheet - 3-SMD, No Lead Tape & Reel (TR) Active 1 Pair Common Anode Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
1N4148UBD Microchip Technology

1N4148UBD

DIODE ARRAY GP 75V 200MA UB

Microchip Technology

151 -
Datasheet - 3-SMD, No Lead Bulk Active 1 Pair Series Connection Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
RJS6004WDPK-00#T0 Renesas Electronics Corporation

RJS6004WDPK-00#T0

DIODE ARRAY SIC 600V 10A TO-3P

Renesas Electronics Corporation

750 -
Datasheet - TO-220-3 Full Pack Bulk Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 600 V 10A (DC) 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 15 ns 10 µA @ 600 V -55°C ~ 150°C - - Through Hole TO-3P
GB2X50MPS12-227 GeneSiC Semiconductor

GB2X50MPS12-227

DIODE MOD SIC 1200V 93A SOT-227

GeneSiC Semiconductor

248 -
Datasheet SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 93A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V -55°C ~ 175°C - - Chassis Mount SOT-227
DCG45X1200NA IXYS

DCG45X1200NA

DIODE MOD SIC 1200V 22A SOT227B

IXYS

196 -
Datasheet - SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 22A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
GB2X50MPS17-227 GeneSiC Semiconductor

GB2X50MPS17-227

DIODE MOD SIC 1700V 136A SOT-227

GeneSiC Semiconductor

79 -
Datasheet SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1700 V 136A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227
MBRT20060R GeneSiC Semiconductor

MBRT20060R

DIODE MOD SCHOTT 60V 100A 3TOWER

GeneSiC Semiconductor

67 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Schottky 60 V 100A 800 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MUR20020CT GeneSiC Semiconductor

MUR20020CT

DIODE MODULE GP 200V 100A 2TOWER

GeneSiC Semiconductor

48 -
Datasheet - Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
DDB6U85N16LHOSA1 Infineon Technologies

DDB6U85N16LHOSA1

DIODE MODULE GP 1600V AGISOPACK1

Infineon Technologies

9 -
Datasheet - Module Bulk Obsolete 3 Independent Standard 1600 V 60A 1.44 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 5 mA @ 1600 V 150°C (Max) - - Chassis Mount AG-ISOPACK-1
MD165A16D2-BP Micro Commercial Co

MD165A16D2-BP

DIODE MODULE GP 1600V 165A D2

Micro Commercial Co

80 -
Datasheet - D2 Bulk Active 1 Pair Common Anode Standard 1600 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount D2
MSCDC150KK70D1PAG Microchip Technology

MSCDC150KK70D1PAG

DIODE MODULE SIC 700V 150A D1P

Microchip Technology

34 -
Datasheet - Module Box Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 700 V 150A 1.8 V @ 150 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 700 V -40°C ~ 175°C - - Chassis Mount D1P
DCG130X1200NA IXYS

DCG130X1200NA

DIODE MOD SIC 1200V 64A SOT227B

IXYS

335 -
Datasheet - SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 64A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 800 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
JANTX1N6511 Microchip Technology

JANTX1N6511

DIODE ARRAY GP 75V 300MA 14-CDIP

Microchip Technology

90 -
Datasheet - 14-CDIP (0.300", 7.62mm) Bulk Active 7 Independent Standard 75 V 300mA (DC) 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns 100 nA @ 40 V - Military MIL-PRF-19500/4 Through Hole 14-CDIP
DD400S33K2CNOSA1 Infineon Technologies

DD400S33K2CNOSA1

DIODE MODULE GP 3300V AIHV130-3

Infineon Technologies

9,416 -
Datasheet - Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
DD800S33K2CNOSA1 Infineon Technologies

DD800S33K2CNOSA1

DIODE MODULE GP 3300V AIHV130-3

Infineon Technologies

6,254 -
Datasheet - Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 800 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
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Diode Arrays FAQ

Common questions about selecting, comparing and sourcing Diode Arrays components through Winsun (HK) Electronics.

What should I check when selecting Diode Arrays components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Diode Arrays components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.