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FILTERED PRODUCT SELECTION

Single Diodes

Use the filters and product table below to compare Single Diodes components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDK02G120C5XTMA1 Infineon Technologies

IDK02G120C5XTMA1

DIODE SIC 1.2KV 11.8A TO263-1

Infineon Technologies

688 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 11.8A 1.65 V @ 2 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 182pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
IDW40E65D1FKSA1 Infineon Technologies

IDW40E65D1FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

110 -
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 129 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
IDH06G65C5XKSA2 Infineon Technologies

IDH06G65C5XKSA2

DIODE SIL CARB 650V 6A TO220-2-1

Infineon Technologies

1,287 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDW40E65D2FKSA1 Infineon Technologies

IDW40E65D2FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

2,289 -
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 2.3 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
IDW75E60FKSA1 Infineon Technologies

IDW75E60FKSA1

DIODE GP 600V 120A TO247-3-1

Infineon Technologies

454 -
Datasheet - TO-247-3 Tube Active Standard 600 V 120A 2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 121 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDDD08G65C6XTMA1 Infineon Technologies

IDDD08G65C6XTMA1

DIODE SIL CARB 650V 24A HDSOP-10

Infineon Technologies

1,875 -
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 24A - No Recovery Time > 500mA (Io) 0 ns 27 µA @ 420 V 401pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
IDH08G120C5XKSA1 Infineon Technologies

IDH08G120C5XKSA1

DIODE SIL CARB 1.2KV TO220-1

Infineon Technologies

285 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDH08SG60CXKSA2 Infineon Technologies

IDH08SG60CXKSA2

DIODE SIL CARB 600V 8A TO220-2-1

Infineon Technologies

1,662 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDK10G120C5XTMA1 Infineon Technologies

IDK10G120C5XTMA1

DIODE SIC 1.2KV 31.9A TO263-1

Infineon Technologies

835 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 31.9A 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 525pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
IDW12G65C5XKSA1 Infineon Technologies

IDW12G65C5XKSA1

DIODE SIL CARB 650V 12A TO247-3

Infineon Technologies

268 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

Need Help Sourcing Single Diodes?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about filtering, comparing and sourcing Single Diodes components.

How can I narrow the Single Diodes selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific Single Diodes part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.