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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTX1N5806/TR Microchip Technology

JANTX1N5806/TR

DIODE GEN PURP 150V 1A

Microchip Technology

7,860 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JAN1N4249 Microchip Technology

JAN1N4249

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

5,851 -
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1000 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
JAN1N5621 Microchip Technology

JAN1N5621

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

3,676 -
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
E3D08065G-TR Wolfspeed, Inc.

E3D08065G-TR

SIC, SCHOTTKY DIODE, 8A, 650V, T

Wolfspeed, Inc.

6,830 -
Datasheet E-Series TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy SiC (Silicon Carbide) Schottky 650 V 22A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 51 µA @ 650 V 369pF @ 0V, 1MHz Automotive - Surface Mount TO-263-2 -55°C ~ 175°C
60CPF02 Vishay General Semiconductor - Diodes Division

60CPF02

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

5,119 -
Datasheet - TO-247-3 Tube Obsolete Standard 200 V 60A 1.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 200 V - - - Through Hole TO-247AC -40°C ~ 150°C
60EPF02 Vishay General Semiconductor - Diodes Division

60EPF02

DIODE GP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3,108 -
Datasheet - TO-247-2 Tube Obsolete Standard 200 V 60A 1.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
60EPF04 Vishay General Semiconductor - Diodes Division

60EPF04

DIODE GP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division

6,185 -
Datasheet - TO-247-2 Tube Obsolete Standard 400 V 60A 1.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 400 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
80EPS12 Vishay General Semiconductor - Diodes Division

80EPS12

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

3,599 -
Datasheet - TO-247-3 Tube Obsolete Standard 1200 V 80A 1.17 V @ 80 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC -40°C ~ 150°C
CDLL1A60/TR Microchip Technology

CDLL1A60/TR

DIODE SCHOTTKY 60V 1A DO213AB

Microchip Technology

5,440 -
Datasheet - DO-213AB, MELF Tape & Reel (TR) Active Schottky 60 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V 0.9pF @ 5V, 1MHz - - Surface Mount DO-213AB -
SCS306AMC Rohm Semiconductor

SCS306AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

6,403 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
JAN1N5712-1/TR Microchip Technology

JAN1N5712-1/TR

DIODE SCHOTTKY 16V 33MA DO35

Microchip Technology

5,698 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 16 V 33mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5619E3/TR Microchip Technology

1N5619E3/TR

DIODE GEN PURP 600V 1A A AXIAL

Microchip Technology

7,282 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 400 V 25pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 200°C
DMA10P1200HR IXYS

DMA10P1200HR

DIODE GEN PURP 1.2KV 10A ISO247

IXYS

9,315 -
Datasheet - TO-247-3 Tube Active Standard 1200 V 10A 1.23 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 1200 V 4pF @ 400V, 1MHz - - Through Hole ISO247 -55°C ~ 175°C
VS-12FL100S05 Vishay General Semiconductor - Diodes Division

VS-12FL100S05

DIODE GEN PURP 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division

6,730 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1000 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 1000 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-12FLR100S05 Vishay General Semiconductor - Diodes Division

VS-12FLR100S05

DIODE GP REV 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division

3,703 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1000 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 1000 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
1N5419 Microchip Technology

1N5419

DIODE GEN PURP 500V 3A B SQ-MELF

Microchip Technology

4,328 -
Datasheet - SQ-MELF, B Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5803 Microchip Technology

1N5803

DIODE GEN PURP 75V 1A AXIAL

Microchip Technology

8,532 -
Datasheet - A, Axial Bulk Obsolete Standard 75 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
VS-41HF80 Vishay General Semiconductor - Diodes Division

VS-41HF80

DIODE GEN PURP 800V 40A DO203AB

Vishay General Semiconductor - Diodes Division

3,677 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-41HFR80 Vishay General Semiconductor - Diodes Division

VS-41HFR80

DIODE GP REV 800V 40A DO203AB

Vishay General Semiconductor - Diodes Division

6,790 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
DSEP9-06CR IXYS

DSEP9-06CR

DIODE GP 600V 9A ISOPLUS247

IXYS

4,919 -
Datasheet HiPerDynFRED™ TO-247-3 Tube Obsolete Standard 600 V 9A 4 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 15 ns 50 µA @ 600 V - - - Through Hole ISOPLUS247™ -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.